List of publications

1996 1997 1998 1999 2000
2001 2002 2003 2004 2005
2006 2007 2008 2009 2010
2011 2012 2013 2014

2014

210. Bandwidth-controlled metal-insulator transition in epitaxial PrNiO3 ultrathin films induced by dimensional crossover
E. Sakai, K. Yoshimatsu, M. Tamamitsu, K. Horiba, A. Fujimori, M. Oshima, and H. Kumigashira
Appl. Phys. Lett. 104, 171609 (2014).

209. Te 5p orbitals bring three-dimensional electronic structure to two-dimensional Ir0.95Pt0.05Te2
D. Ootsuki, T. Toriyama, M. Kobayashi, S. Pyon, K. Kudo, M. Nohara, K. Horiba, M. Kobayashi, K. Ono, H. Kumigashira, T. Noda, T. Sugimoto, A. Fujimori, N. L. Saini, T. Konishi, Y. Ohta, and T. Mizokawa
Phys. Rev. B 89, 104506 (2014).

208. Persistent insulator to metal transition of a VO2 thin film by soft x-ray irradiation
Y. Muraoka, H. Nagao, S. Katayama, T. Wakita, M. Hirai, T. Yokoya, H. Kumigashira, and M. Oshima
Jpn. J. Appl. Phys. 53, 05FB09 (2014).

207. Characteristic two dimensional Fermi surface topology of high-Tc iron-based superconductors
M. Sunagawa, T. Ishiga, K. Tsubota, T. Jabuchi, J. Sonoyama, K. Iba, K. Kudo, M. Nohara, K. Ono, H. Kumigashira, T. Wakita, Y. Muraoka, and T. Yokoya
Sci. Rep. 4, 4381 (2014).

206. Metallic conductivity in infinite-layer strontium iron oxide thin films reduced by calcium hydride
T. Katayama, A. Chikamatsu, Y. Hirose, H. Kumigashira, T. Fukumura, and T. Hasegawa
J. Phys. D: Appl. Phys. 47 135304[1-6] (2014).

205. Soft x-ray photoemission study of new BiS2-layered superconductor LaO1-xFxBiS2
S. Nagira, J. Sonoyama, T. Wakita, M. Sunagawa, Y. Izumi, T. Muro, H. Kumigashira, M. Oshima, K. Deguchi, H. Okazaki, Y. Takano, O. Miura, Y. Mizuguchi, K. Suzuki, H. Usui, K. Kuroki, K. Okada, Y. Muraoka, and T. Yokoya
J. Phys. Soc. Jpn. 83, 033703 (2014).

204. Pseudogap Formation above the superconducting dome in iron-pnictides
T. Shimojima, T. Sonobe, W. Malaeb, K. Shinada, A. Chainani, S. Shin, T. Yoshida, S. Ideta, A. Fujimori, H. Kumigashira, K Ono, Y. Nakashima, H. Anzai, M. Arita, A. Ino, H. Namatame, M. Taniguchi, M. Nakajima, S. Uchida, Y. Tomioka, T.Ito, K. Kihou, C. H. Lee, A. Iyo, H. Eisaki, K. Ohgushi, S. Kasahara, T. Terashima, H. Ikeda, T. Shibauchi, Y. Matsuda, K. Ishizaka
Phys. Rev. B 89, 045101[1-10] (2014).

2013

203. Gradual localization of Ni 3d states in LaNiO3 ultrathin films induced by dimensional crossover
E. Sakai, M. Tamamitsu, K. Yoshimatsu, S. Okamoto, K. Horiba, M. Oshima, and H. Kumigashira
Phys. Rev. B 87, 075132[1-8] (2013).

202. Determination of the surface and interface phase shifts in metallic quantum well structures of perovskite oxides
K. Yoshimatsu, E. Sakai, M. Kobayashi, K. Horiba, T. Yoshida, A. Fujimori, M. Oshima, and H. Kumigashira
Phys. Rev. B 88, 115308[1-5] (2013).

201. Chemical-state-resolved depth profiles of Al/Pr0.7Ca0.3MnO3 stacked structures for application in resistive switching devices
S. Toyoda, T. Namiki, E. Sakai, K. Nakata, M. Oshima, and H. Kumigashira
J. Appl. Phys. 114, 243711[1-5] (2013).

200. Epitaxial synthesis and electronic properties of double-perovskite Sr2TiRuO6 films
K. Nogami, K. Yoshimatsu, H. Mashiko, E. Sakai, H. Kumigashira, O. Sakata, T. Oshima, and A. Ohtomo
Appl. Phys. Exp. 6, 105502[1-4] (2013).

199. Spectroscopic studies on the electronic and magnetic states of Co-doped perovskite manganite Pr0.8Ca0.2Mn1−yCoyO3 thin films
K. Yoshimatsu, H. Wadati, E. Sakai, T. Harada, Y. Takahashi, T. Harano, G. Shibata, K. Ishigami, T. Kadono, T. Koide, T. Sugiyama, E. Ikenaga, H. Kumigashira, M. Lippmaa, M. Oshima, and A. Fujimori
Phys. Rev. B 88, 174423[1-6] (2013).

198. Observation of rebirth of metallic paths during resistance switching of metal nanowire
K. Horiba, K. Fujiwara, N. Nagamura, S. Toyoda, H. Kumigashira, M. Oshima, and H. Takagi
Appl. Phys. Lett. 103, 193114[1-3] (2013).

197. Resonant Photoemission Spectroscopy of the Cathode Material LixMn0.5Fe0.5PO4 for Lithium-Ion Battery
S. Kurosumi, K. Horiba, N. Nagamura, S. Toyoda, H. Kumigashira, M. Oshima, S. Furutsuki, S. Nishimura, A. Yamada, and N. Mizuno
J. Power Source 226, 42-46 (2013).

196. Electronic and transport properties of Eu-substituted SrFeO2 thin films with infinite-layer structure
A. Chikamatsu, T. Matsuyama, T. Katayama, Y. Hirose, H. Kumigashira, M. Oshima, T. Fukukmura, and T. Hasegawa
J. Cry. Growth 378, 165-167 (2013).

195. Strongly Spin-Orbit Coupled Two-Dimensional Electron Gas Emerging near the Surface of Polar Semiconductors
M. Sakano, M. S. Bahramy, A. Katayama, T. Shimojima, H. Murakawa, Y. Kaneko, W. Malaeb, S. Shin, K. Ono, H. Kumigashira, R. Arita, N. Nagaosa, H. Y. Hwang, Y. Tokura, and K. Ishizaka
Phys. Rev. Lett. 110, 107204[1-5] (2013).

194. Electronic structure of hole-doped delafossite oxides CuCr1-xMgxO2
T. Yokobori, M. Okawa, K. Konishi, R. Takei, K. Katayama, S. Oozono, T. Shinmura, T. Okuda, H. Wadati, E. Sakai, K. Ono, H. Kumigashira, M. Oshima, T. Sugiyama, E. Ikenaga, N. Hamada, and T. Saitoh
Phys. Rev. B 87, 195124[1-8] (2013).
arXiv:1211.1829

193. Collapsed tetragonal phase transition of Ca(Fe1-xRhx)2As2 studied with photoemission spectroscopy
K. Tsubota, T. Wakita, H. Nagao, C. Hiramatsu, T. Ishiga, M. Sunagawa, K. Ono, H. Kumigashira, M. Danura, K. Kudo, M. Nohara, Y. Muraoka, and T. Yokoya
J. Phys. Soc. Jap. 82, 073705[1-5] (2013).

192. Effects of Zn substitution on the electronic structure of BaFe2As2 revealed by angle-resolved photoemission spectroscopy
S. Ideta, T. Yoshida, M. Nakajima, W. Malaeb, T. Shimojima, K. Ishizaka, A. Fujimori, H. Kimigashira, K. Ono, K. Kihou, Y. Tomioka, C. H. Lee, A. Iyo, H. Eisaki, T. Ito, and S. Uchida
Phys. Rev. B 87, 201110R[1-5] (2013).

191. Absence of Superconductivity in the “hole-doped” Fe pnictide Ba(Fe1-xMnx)2As2: Photoemission and X-ray Absorption Spectroscopy Studies
H. Suzuki, T. Yoshida, S. Ideta, G. Shibata, K. Ishigami, T. Kadono, A. Fujimori, M. Hashimoto, D. H. Lu, Z.-X. Shen, K. Ono, E. Sakai, H. Kumigashira, M. Matsuo, and T. Sasagawa
Phys. Rev. B 88, 100501R[1-5] (2013).

2012

190. Depth profiling the potential in perovskite oxide heterojunctions using photoemission spectroscopy
M. Minohara, K. Horiba, H. Kumigashira, E. Ikenaga, and M. Oshima
Phys. Rev. B 85, 165108[1-6] (2012).

189. Self-Energy on the Low- to High-Energy Electronic Structure of Correlated Metal SrVO3
S. Aizaki, T. Yoshida, K. Yoshimatsu, M. Takizawa, M. Minohara, S. Ideta, A. Fujimori, K. Gupta, P. Mahadevan, K. Horiba, H. Kumigashira, and M. Oshima
Phys. Rev. Lett. 109, 056401[1-5] (2012).

188. Core level and valence band spectroscopy of SrRuO3: electron correlation vs. covalence effects
E.B. Guedes, M. Abbate, K. Ishigami, A. Fujimori, K. Yoshimatsu, H. Kumigashira, M. Oshima, F.C. Vicentin, P.T. Fonseca, and R.J.O. Mossanek
Phys. Rev. B 86, 235127[1-8] (2012).

187. Epitaxially Stabilized EuMoO3: A New Itinerant Ferromagnet
Y. Kozuka, H. Seki, T. C. Fujita, S. Chakraverty, K. Yoshimatsu, H. Kumigashira, M. Oshima, M. S. Bahramy, R. Arita, and M. Kawasaki
Chem. Mater. 24, 3746-3750 (2012).
arXiv 1209.2032.

186. Investigation of electronic states of infinite-layer SrFeO2 epitaxial thin films by x-ray photoemission and absorption spectroscopies
A. Chikamatsu, T. Matsuyama, Y. Hirose, H. Kumigashira, M. Oshima, and T. Hasegawa
J. Electron Spectr. Rel. Phenom. 184, 547-550 (2012).

185. Electronic Structure of SrTi0.99Sc0.01O3 Thin Film by High-Resolution Soft-X-ray Spectroscopy
T. Okumura, T. Inoue, Y. Tasaki, E. Sakai, H. Kumigashira, and T. Higuchi
J. Phys. Soc. Jpn. 81, 094705[1-4] (2012).

184. Determining factor of effective work function in metal/bi-layer high-k gate stack structure studied by photoemission spectroscopy
S. Toyoda, H. Kumigashira, M. Oshima, H. Sugaya, and H. Morita
Appl. Phys. Lett. 100, 112906[1-3] (2012).

183. Significant increase in conduction band discontinuity due to solid phase epitaxy of Al2O3 gate insulator films on GaN semiconductor
S. Toyoda, T. Shinohara, H. Kumigashira, M. Oshima, and Y. Kato
Appl. Phys. Lett. 101, 231607[1-4] (2012).

182. Te concentration dependent photoemission and inverse-photoemission study of FeSe1-xTex
T. Yokoya, R. Yoshida, Y. Utsumi, K. Tsubota, H. Okazaki, T. Wakita, Y. Mizuguchi, Y. Takano, T. Muro, Y. Kato, H. Kumigashira, M. Oshima, H. Harima, Y. Aiura, H. Sato, A. Ino, H. Namatame, M. Taniguchi, M. Hirai, and Y. Muraoka
Sci. Technol. Adv. Mater. 13, 054403[1-8] (2012).

2011

181. Metallic Quantum Well States in Artificial Structures of Strongly Correlated Oxide
K. Yoshimatsu, K. Horiba, H. Kumigashira, T. Yoshida, A. Fujimori, and M. Oshima
Science 333, 319-322 (2011).

180. Formation of transition layers at metal/perovskite oxide interfaces showing resistive switching behaviors
T. Yamamoto, R. Yasuhara, I. Ohkubo, H. Kumigashira, and M. Oshima
J. Appl. Phys. 110, 053707[1-7] (2011).

179. Competition between instabilities of Peierls transition and Mott transition in W-doped VO2 thin films
E. Sakai, K. Yoshimatsu, K. Shibuya, H. Kumigashira, E. Ikenaga, M. Kawasaki, Y. Tokura, and M. Oshima
Phys. Rev. B 84, 195132[1-5] (2011).

178. Magnetic and electronic properties of La2VMnO6 ordered double perovskite thin films
S. Chakraverty, K. Yoshimatsu, Y. Kozuka, H. Kumigashira, M. Oshima, T. Makino, A. Ohtomo, and M. Kawasaki
Phys. Rev. B 84, 132411[1-4] (2011).

177. An n-type Transparent Conducting Oxide: Nb12O29
T. Ohsawa, J. Okubo, T. Suzuki, H. Kumigashira, M. Oshima, and T. Hitosugi
J. Phys. Chem. C 115, 16625-16629 (2011).

176. Carrier compensation mechanism in heavily Nb-doped anatase Ti1-xNbxO2+δ epitaxial thin films
H. Nogawa, A. Chikamatsu, Y. Hirose, S. Nakao, H. Kumigashira, M. Oshima, and T. Hasegawa
J. Phys. D: Appl. Phys. 44, 365404 [6] (2011).

175. Electron beam irradiation-induced reduction of Sn on epitaxial rutile SnxTi1-xO2 alloy thin films
Y. Komuro, H. Kumigashira, M. Oshima, Y. Matsumoto
Thin Solid Films 519, 2555–2558 (2011).

174. Scanning photoelectron microscope for nanoscale three-dimensional spatial-resolved electron spectroscopy for chemical analysis
K. Horiba, Y. Nakamura, N. Nagamura, S. Toyoda, H. Kumigashira, M. Oshima, K. Amemiya, Y. Senba, and H. Ohashi
Rev. Sci. Instrum. 82, 113701 [1-6] (2011).

173. Resonant Photoemission Spectroscopy of the Cathode Material LixFePO4 for Lithium Ion Battery
S. Kurosumi, N. Nagamura, S. Toyoda, Koji Horiba, Hiroshi Kumigashira, M. Oshima, S. Furutsuki, S. Nishimura, A. Yamada, and N. Mizuno
J. Phys. Chem. C 115, 25519-25522 (2011).

172. Band offsets of polar and nonpolar GaN/ZnO heterostructures determined by synchrotron radiation photoemission spectroscopy
J. W. Liu, A. Kobayashi, S. Toyoda, H. Kamada, A. Kikuchi, J. Ohta, H. Fujioka, H. Kumigashira, and M. Oshima
Phys. Status Solidi B 248, 956-959 (2011).

171. Chemical-state resolved depth profile and band discontinuity in TiN/HfSiON gate stack structure with AlOx cap layer
S. Toyoda, H. Kamada, H. Kumigashira, and M. Oshima
J. Appl. Phys. 110, 104107[1-4] (2011).

170. Nano-Scale Characterization of Poly-Si Gate on High-k Gate Stack Structures by Scanning Photoemission Microscopy
S. Toyoda, Y. Nakamura, K. Horiba, H. Kumigashira, M. Oshima, and K. Amemiya
e-J. Surf. Sci. Nanotech. 9, 224-227 (2011).

169. Synchrotron Radiation Nano-spectroscopy of Dielectrics for LSI and ReRAM
M. Oshima, S. Toyoda, K. Horiba, R. Yasuhara and H. Kumigashira
ECS Trans. 41, 453-460 (2011).
[ElectroChemical Society Transaction Boston, 41(3), 453-460 (2011).]


2010

168. Dimensional-Crossover-Driven Metal-Insulator Transition in SrVO3 Ultrathin Films
K. Yoshimatsu, T. Okabe, H. Kumigashira, S. Okamato, S. Aizaki, A. Fujimori, and M. Oshima
Phys. Rev. Lett. 104, 147601[1-4] (2010).

167. Termination layer dependence of Schottky barrier height for La0.6Sr0.4MnO3/Nb:SrTiO3 heterojunctions
M. Minohara, R. Yasuhara, H. Kumigashira, and M. Oshima
Phys. Rev. B 81, 235322[1-6] (2010).

166. Interfacial chemical states of resistance-switching metal/Pr0.7Ca0.3MnO3 interfaces
R. Yasuhara, T. Yamamoto, I. Ohkubo, H. Kumigashira, and M. Oshima
Appl. Phys. Lett. 97, 132111[1-3] (2010).

165. Transport properties and electronic states of anatase Ti1-xWxO2 epitaxial thin films
U. Takeuchi, A. Chikamatsu, T. Hitosugi, H. Kumigashira, M. Oshima, Y. Hirose, T. Shimada, and T. Hasegawa
J. Appl. Phys. 107, 023705[1-4] (2010).

164. Carrier compensation by excess oxygen atoms in anatase Ti0.94Nb0.06O2+δ epitaxial thin films
H. Nogawa, T. Hitosugi, A. Chikamatsu, S. Nakao, Y. Hirose, T. Shimada, H. Kumigashira, M. Oshima, and T. Hasegawa
Jpn. J. Appl. Phys. 49, 041102[1-4] (2010).

163. Molecular Beam Deposition of Nanoscale Ionic Liquids in Ultrahigh Vacuum
S. Maruyama, Y. Takeyama, H. Taniguchi, H. Fukumoto, M. Itoh, H. Kumigashira, M. Oshima, T. Yamamoto, and Y. Matsumoto
ACS Nano 4, 5946-5952 (2010).

162. Chemical trend of Fermi-level shift in transition metal-doped TiO2 films
Y. Matsumoto, M. Katayama, T. Abe, T. Ohsawa, I. Ohkubo, H. Kumigashira, M. Oshima and H. Koinuma
J. Ceram. Soc. Jpn. 118, 993-996 (2010).

161. Electronic structure of the Novel Filled Skutterudite PrPt4Ge12 Superconductor
Y. Nakamura, H. Okazaki, R. Yoshida, T. Wakita, M. Hirai, Y. Muraoka, H. Takeya, K. Hirata, H. Kumigashira, M. Oshima, and T. Yokoya
J. Phys. Soc. Jpn. 79, 124701[1-4] (2010).

160. Annealing effects of in-depth profile and band discontinuity in TiN/LaO/HfSiO/SiO2/Si gate stack structure studied by angle-resolved photoemission spectroscopy from backside
S. Toyoda, H. Kamada, T. Tanimura, H. Kumigashira, M. Oshima, T. Ohtsuka, Y. Hata, and M. Niwa
Appl. Phys. Lett. 96, 042905[1-3] (2010).

159. Photoinduced charge-trapping phenomena in metal/high-k gate stack structures studied by synchrotron radiation photoemission spectroscopy
T. Tanimura, S. Toyoda, H. Kamada, H. Kumigashira, M. Oshima, T. Sukegawa, G. L. Liu, and Z. Liu
Appl. Phys. Lett. 96, 162902[1-3] (2010).

158. Effect of nitrogen bonding states on dipole at the HfSiO/SiON interface studied by photoemission spectroscopy
S. Toyoda, H. Kamada, A. Kikuchi, H. Kumigashira, M. Oshima, K. Iwamoto, T. Sukegawa, and Z. Liu
J. Appl. Phys. 107, 124103[1-3] (2010).

157. Interfacial reactions in Ru metal-electrode/HfSiON gate stack structures studied by synchrotron-radiation photoemission spectroscopy
H. Kamada, S. Toyoda, T. Tanimura, H. Kumigashira, M. Oshima, G. L. Liu, and Z. Liu, and T. Sukegawa
J. Appl. Phys. 108, 123521[1-4] (2010).

156. Thermal stability of TiN/HfSiON gate stack structures studied by synchrotron-radiation photoemission spectroscopy
S. Toyoda, H. Kamada, H. Kumigashira, M. Oshima, K. Iwamoto, T. Sukegawa, and Z. Liu
Appl. Phys. Lett. 97, 262903[1-3] (2010)

155. Electronic structures of c-plane and a-plane AlN/ZnO heterointerfaces determined by synchrotron radiation photoemission spectroscopy
J. W. Liu, A. Kobayashi, K. Ueno, S. Toyoda, A. Kikuchi, J. Ohta, H. Fujioka, H. Kumigashira, and M. Oshima
Appl. Phys. Lett. 97, 252111[1-3] (2010).

154. Synchrotron Radiation Photoelectron Spectroscopy of Metal Gate /HfSiO(N) /SiO(N) /Si Stack Structures
M. Oshima, S. Toyota, H. Kamada, T. Tanimura, Y. Nakamura, K. Horiba, and H. Kumigashira
ECS Trans. 33, 231-240 (2010).
[ElectroChemical Society Transaction (ECST) 33, 231-240 (2010).]

2009

153. Thickness dependent electronic structure of La0.6Sr0.4MnO3 layer in SrTiO3/ La0.6Sr0.4MnO3 / SrTiO3 heterostructures studied by hard x-ray photoemission spectroscopy
K. Yoshimatsu, K. Horiba, H. Kumigashira, E. Ikenaga, and M. Oshima
Appl. Phys. Lett. 94, 071901[1-3] (2009)

152. Orientation dependence of the Schottky barrier height for La0.6Sr0.4MnO3/SrTiO3 heterojunctions
M. Minohara, Y. Furukawa, R. Yasuhara, H. Kumigashira, and M. Oshima
Appl. Phys. Lett. 94, 242106 [1-3] (2009).

151. Inhomogeneous chemical states in resistance-switching devices with a planar-type Pt/CuO/Pt structure
R. Yasuhara, K. Fujiwara, K. Horiba, H. Kumigashira, M. Kotsugi, M. Oshima, and H. Takagi
Appl. Phys. Lett. 95, 012110[1-3] (2009).

150. Yoshimatsu et al. Reply
K. Yoshimatsu, R. Yasuhara, H. Kumigashira, and M. Oshima
Phys. Rev. Lett. 102, 199704[1] (2009).
Selected for the May 25, 2009 issue of Virtual Journal of Nanoscale Science & Technology

149. Angle-resolved photoemission study of Nb-doped SrTiO3
M. Takizawa, K. Maekawa, H. Wadati, T. Yoshida, and A. Fujimori, H. Kumigashira, and M. Oshima
Phys. Rev. B 79, 113103[1-4] (2009).

148. In-situ photoemission study of Nd1-xSrxMnO3 epitaxial thin films
H. Wadati, A. Chikamatsu, H. Kumigashira, A. Fujimori, M. Oshima, M. Lippmaa, M. Kawasaki, and H. Koinuma
Phys. Rev. B 79, 153106 [1-4] (2009).

147. Electronic structure characterization of La2NiMnO6 epitaxial thin films using synchrotron-radiation photoelectron spectroscopy and optical spectroscopy
M. Kitamura, I. Ohkubo, M. Matsunami, K. Horiba, H. Kumigashira, Y. Matsumoto, H. Koinuma, and M. Oshima
Appl. Phys. Lett. 94, 262503[1-3] (2009).

146. Systematic Analysis of ARPES Spectra of Transition-Metal Oxides: Nature of Effective d Band
H. Wadati, A. Chikamatsu, M. Takizawa, H. Kumigashira, T. Yoshida,T. Mizokawa, A. Fujimori, M. Oshima, and N. Hamada
J. Phys. Soc. Jpn. 78, 094709[1-4] (2009).

145. Pressure-induced change in the electronic structure of epitaxially strained La1-xSrxMnO3 thin films
K. Horiba, A. Maniwa, A. Chikamatsu, K. Yoshimatsu, H. Kumigashira, H. Wadati, A. Fujimori, D. Nomoto, S. Ueda, H. Yoshikawa, E. Ikenaga, J. J. Kim, K. Kobayashi, and M. Oshima
Phys. Rev. B 80, 132406[1-4] (2009).

144. Madelung potentials and covalency effect in strained La1-xSrxMnO3 thin films studied by core-level photoemission spectroscopy
H. Wadati, A. Maniwa, A. Chikamatsu, H. Kumigashira, M. Oshima, T. Mizokawa, A. Fujimori, and G. A. Sawatzky
Phys. Rev. B 80, 125107[1-4] (2009).

143. Chemical stability and transport properties of ultrathin La1.2Sr1.8Mn2O7 Ruddlesden-Popper films
M. Matvejeff, K. Yoshimatsu, H. Kumigashira, M. Oshima, and M. Lippmaa
Appl. Phys. Lett. 95, 152110[1-3] (2009).

142. Coherent and incoherent d band dispersions in SrVO3
M. Takizawa, M. Minohara, H. Kumigashira, D. Toyota, M. Oshima, H. Wadati, T. Yoshida, A. Fujimori, M. Lippmaa, M. Kawasaki, H. Koinuma, G. Sordi, and M. Rozenberg
Phys. Rev. B 80, 235104[1-4] (2009).

141. Effects of thermal annealing on charge density and N chemical states in HfSiON films
T. Tanimura, H. Kamada, S. Toyoda, H. Kumigashira, M. Oshima, G. L. Liu, Z. Liu, and K. Ikeda
Appl. Phys. Lett. 94, 082903[1-3] (2009).

140. Relationship between band alignment and chemical states upon annealing in HfSiON/SiON stacked films on Si substrates
T. Tanimura, S. Toyoda, H. Kamada, H. Kumigashira, M. Oshima, G. L. Liu, Z. Liu, and K. Ikeda
Appl. Phys. Lett. 95, 183113[1-3] (2009).

139. Study on mechanism of crystallization in HfO2 films on Si substrates by in-depth profile analysis using photoemission spectroscopy
S. Toyoda, H. Takahashi, H. Kumigashira, M. Oshima, D.-I. Lee, S. Sun, Z. Liu, Y. Sun, P. A. Pianetta, I. Oshiyama, K. Tai, and S. Fukuda
J. Appl. Phys. 106, 064103[1-4] (2009).

138. Mechanism of Carrier Mobility Degradation Induced by Crystallization of HfO2 Gate Dielectrics
T. Ando, T. Shimura, H. Watanabe, T. Hirano, S. Yoshida, K. Tai, S. Yamaguchi, H. Iwamoto, S. Kadomura, S. Toyoda, H. Kumigashira, and M. Oshima
Appl. Phys. Exp. 2, 071402[1-3] (2009).

137. In-depth profile of gate-insulator films on Si substrates studied by angle-resolved photoelectron spectroscopy using synchrotron radiation
S. Toyoda, H. Kumigashira, M. Oshima, G. L. Liu, Z. Liu, and K. Ikeda
J. Surf. Anal. 15, 299-302 (2009).

2008

136. In-situ Photoemission Study of Pr1-xCaxMnO3 Epitaxial Thin Films with Suppressed Charge Fluctuations
H. Wadati, A. Maniwa, A. Chikamatsu, I. Ohkubo, H. Kumigashira, M. Oshima, A. Fujimori, M. Lippmaa, M. Kawasaki, and H. Koinuma
Phys. Rev. Lett. 100, 026402 [1-4] (2008).

135. Origin of metallic states at heterointerface between band insulators LaAlO3 and SrTiO3
K. Yoshimatsu, R. Yasuhara, H. Kumigashira, and M. Oshima
Phys. Rev. Lett. 101, 026802[1-4] (2008).
Selected for the July 21, 2008 issue of Virtual Journal of Nanoscale Science & Technology Selected for the Highlight of Nature publishing group; http://www.natureasia.com/asia-materials/highlight.php?id=271

134. Interfacial electronic structure of SrTiO3/SrRuO3 heterojuctions studied by in situ photoemission spectroscopy
H. Kumigashira, M. Minohara, M. Takizawa, A. Fujimori, D. Toyota, I. Ohkubo, M. Oshima, M. Lippmaa, and M. Kawasaki
Appl. Phys. Lett. 92, 122105[1-3] (2008).

133. Trap-controlled space-charge-limited current mechanism in resistance switching at metal/manganese oxide interface
T. Harada, I. Ohkubo, K. Tsubouchi, H. Kumigashira, T. Ohnishi, M. Lippmaa, Y. Matsumoto, H. Koinuma, and M. Oshima
Appl. Phys. Lett. 92, 222113 [1-3] (2008).

132. Epitaxial growth and surface metallic nature of LaNiO3 thin films
K. Tsubouchi, I. Ohkubo, H. Kumigashira, Y. Matsumoto, T. Ohnishi, M. Lippmaa, H. Koinuma, and M. Oshima
Appl. Phys. Lett. 92, 262109[1-3] (2008).

131. Electronic band structure of transparent conductor: Nb-doped anatase TiO2
T. Hitosugi, H. Kamisaka, K. Yamashita, H. Nogawa, Y. Furubayashi, S. Nakao, N. Yamada, A. Chikamatsu, H. Kumigashira, M. Oshima, Y. Hirose, T. Shimada, and T. Hasegawa
Appl. Phys. Express 1, 111203[1-3] (2008).

130. Highly Reliable TaOX ReRAM and Direct Evidence of Redox Reaction Mechanism
Z. Wei, Y. Kanzawa, K. Arita, Y. Katoh, K. Kawai, S. Muraoka, S. Mitani, S. Fujii, K.Katayama, M. Iijima, T. Mikawa, T. Ninomiya, R. Miyanaga, Y. Kawashima, K. Tsuji, A. Himeno, T. Okada, R. Azuma1, K. Shimakawa, H. Sugaya1, T. Takagi, R. Yasuhara, K.Horiba, H. Kumigashira, and M. Oshima
Tech. Dig. - Int. Electron Devices Meet (IEEE) 2008, 293-296 (2008).

129. Field-induced resistance switching at metal / perovskite manganese oxide interface
I. Ohkubo, K. Tsubouchi, T. Harada, H. Kumigashira, K. Itaka, Y. Matsumoto, T. Ohnishi, M. Lippmaa, H. Koinuma, and M. Oshima
Mater. Sci. Eng. B 148, 13-15 (2008).

128. Electrode dependence and film resistivity effect in the electric-field induced resistance-switching phenomena in epitaxial NiO films
T. Ishihara, I. Ohkubo, K. Tsubouchi, H. Kumigashira, U. S. Joshi, Y. Matsumoto, H. Koinuma, and M. Oshima
Mater. Sci. Eng. B 148, 40-42 (2008).

127. Modification of reflection high energy electron diffraction system for in-situ monitoring of oxide epitaxy at high oxygen pressure
K. Tsubouchi, I. Ohkubo, T. Harada, H. Kumigashira, Y. Matsumoto, T. Ohnishi, M. Lippmaa, H. Koinuma, and M. Oshima
Mater. Sci. Eng. B 148, 16-18 (2008).

126. Depth profiling of chemical states and charge density in HfSiON by photoemission spectroscopy using synchrotron radiation
T. Tanimura, S. Toyoda, H. Kumigashira, and M. Oshima, K. Ikeda, G. L. Liu, and Z. Liu
Appl. Phys. Lett. 92, 082903 [1-3] (2008).

125. Thermal stability in a-Si/HfSiO(N)/Si gate stack structures studied by photoemission spectroscopy using synchrotron radiatio
S. Toyoda, H Kamada, T Tanimura, H. Kumigashira, M. Oshima, G. L. Liu, Z. Liu, and K. Ikeda
Appl. Phys. Lett. 93, 182906 [1-3] (2008).

124. Control of oxidation and reduction reactions at HfSiO/Si interfaces through N exposure or incorporation
H. Kamada, T. Tanimura, S. Toyoda, H. Kumigashira, M. Oshima, G. L. Liu, Z. Liu, and K. Ikeda
Appl. Phys. Lett. 93, 212903 [1-3] (2008).

123. Application of SPELEEM to high-k gate dielectrics: relationship between surface morphology and photoelectron spectra during Hf-silicide formation
R. Yasuhara, T. Taniuchi, H. Kumigashira, M. Oshima, F.Z. Guo, K. Ono, T. Kinoshita, K. Ikeda, G.-L. Liu, Z. Liu, and K. Usuda
Appl. Surf. Sci. 254, 4757-4761 (2008).

122. Analysis of x-ray irradiation effect in high-k gate dielectrics by time-dependent photoemission spectroscopy using synchrotron radiation
T. Tanimura, S. Toyoda, H. Kumigashira, M. Oshima, K. Ikeda, G.L. Liu, Z. Liu and K. Usuda
Surf. Interface Anal. 40, 1606-1609 (2008).

2007

121. Band diagrams of spin tunneling junctions La0.6Sr0.4MnO3 / Nb:SrTiO3 and SrRuO3 / Nb:SrTiO3 determined by in-situ photoemission spectroscopy
M. Minohara, I. Ohkubo, H. Kumigashira, and M. Oshima
Appl. Phys. Lett. 90, 132123[1-3] (2007).
Selected for the April 16, 2007 issue of Virtual Journal of Nanoscale Science & Technology

120. High–throughput characterization of metal electrode performance for electric–field–induced resistance switching in metal–Pr0.7Ca0.3MnO3–metal structures
K. Tsubouchi, I. Ohkubo, H. Kumigashira, M. Oshima, Y. Matsumoto, K. Itaka, and H. Koinuma
Adv. Matter. 19, 1711-1713 (2007).

119. Gradual Disappearance of the Fermi Surface near the Metal-Insulator Transition in La1-xSrxMnO3 Thin Films
A. Chikamatsu, H. Wadati, H. Kumigashira, M. Oshima, A. Fujimori, M. Lippmaa, K. Ono, M. Kawasaki, and H. Koinuma
Phys. Rev. B 76, 201103(R) [1-4] (2007).

118. Magnetic domain structure of technically patterned ferromagnet La1-xSrxMnO3 thin film
M. Kubota, T. Taniuchi, K. Yasuhara, H. Kumigashira, K. Ono, M. Oshima, H. Okazaki, T. Wakita, N. Yokoya, H. Akinaga, M. Lippmaa, M. Kawasaki, and H. Koinuma
Appl. Phys. Lett. 91, 182503 [1-3] (2007).

117. Photoemission study of TiO2/VO2 interfaces
K. Maekawa, M. Takizawa, H. Wadati, T. Yoshida, A. Fujimori, H. Kumigashira, M. Oshima, Y. Muraoka, Y. Nagao, and Z. Hiroi
Phys. Rev. B 76, 115121[1-5] (2007).

116. Temperature-dependent photoemission and x-ray absorption studies of the metal-insulator transition in Bi1-xLaxNiO3
H. Wadati, K. Tanaka, A. Fujimori, T. Mizokawa, H. Kumigashira, M. Oshima, S. Ishiwata, M. Azuma, and M. Takano
Phys. Rev. B 76, 205123 [1-4] (2007).

115. In-situ angle-resolved photoemission study on half-metallic La0.6Sr0.4MnO3 thin films
A. Chikamatsu, H.Wadati, H. Kumigashira, M. Oshima, A. Fujimori, N. Hamada, T. Ohnishi, M. Lippmaa, K. Ono, M. Kawasaki, and H. Koinuma
J. Magn. Magn. Mater. 310, 1030-1032 (2007).

114. In-situ photoemission study of Pr1-xCaxMnO3 epitaxial thin films
H. Wadati, A. Maniwa, I. Ohkubo, H. Kumigashira, A. Fujimori, M. Oshima, M. Lippmaa, M. Kawasaki, and H. Koinuma
J. Magn. Magn. Mater. 310, 963-965 (2007).

113. Transport and magnetic properties of Pr1-xCaxMnO3 epitaxial films grown on LaAlO3 substrates
A. Maniwa, K. Okano, I. Ohkubo, H. Kumigashira, M. Oshima, M. Lippmaa, M. Kawasaki, and H. Koinuma
J. Magn. Magn. Mater. 310, 2237-2238 (2007).

112. In-situ photoemission characterization of the tunneling barrier in La0.6Sr0.4MnO3/SrTiO3/La0.6Sr0.4MnO3 tunneling junctions
H. Kumigashira, R. Hashimoto, A. Chikamatsu, M. Oshima, H. Wadati, A. Fujimori, M. Lippmaa, M. Kawasaki, and H. Koinuma
J. Magn. Magn. Mater. 310, 1997-1999 (2007).

111. Temperature-dependence of the electronic structure of La1-xSrxMnO3 thin films studied by in situ photoemission spectroscopy
K. Horiba, A. Chikamatsu, H. Kumigashira, M. Oshima, H. Wadati, A. Fujimori, M. Lippmaa, M. Kawasaki, and H. Koinuma
J. Electron Spectr. Rel. Phenom. 156-158, 375-378 (2007).

110. Thickness Dependence of Magnetic Domain Formation in La0.6Sr0.4MnO3 Epitaxial Thin Films Studied by XMCD-PEEM
T. Taniuchi, R. Yasuhara, H. Kumigashira, M. Kubota, H. Okazaki, T. Wakita, T. Yokoya, K. Ono, M. Oshima, M. Lippmaa, M. Kawasaki, and H. Koinuma
Surf. Sci. 601, 4690-4693 (2007).

109. Photoemission Study of Perovskite-Type Manganites with Stripe Ordering
K. Ebata, H. Wadati, M. Takizawa, K. Maekawa, A. Fujimori, A. Chikamatsu, H. Kumigashira, M. Oshima, Y. Tomioka, H. Kuwahara, and Y. Tokura
J. Supercond. Nov. Magn. 20, 543-546 (2007).

108. Combinatorial in situ growth-and-analysis with synchrotron radiation of thin films for oxide electronics
M. Oshima, H. Kumigashira, T. Ohnishi, M. Lippmaa, M. Kawasaki, and H.Koinuma
AIP Conf. Proc. 879, 1667 (2007).

107. Suppression of silicidation and crystallization by atmosphere controlled annealing for poly-crystalline silicon/HfO2/SiO2/Si gate stack structures
H. Takahashi, S. Toyoda, J. Okabayashi, H. Kumigashira, M. Oshima, K. Ikeda, Guo Lin Liu, Z. Liu, and K. Usuda
Appl. Phys. Lett. 91, 012902 [1-3] (2007).

106. Annealing-induced interfacial reactions between gate electrodes and HfO2/Si gate stack studied by synchrotron radiation photoemission and x-ray absorption spectroscopy
H. Takahashi, J. Okabayashi, S. Toyoda, H. Kumigashira, M. Oshima, K. Ikeda, Guo Lin Liu, Z. Liu and K. Usuda
AIP Conf. Proc. 879, 1569 (2007).

2006

105. Interfacial reaction in ZrO2/Si gate-stack structure probed by photoemission spectroscopy combined with combinatorial annealing system
J. Okabayashi, S. Toyoda, H. Takahashi, H. Kumigashira, M. Oshima, K. Ikeda, G.L. Liu, Z. Liu and K. Usuda
e-J. Surf. Sci. Nanotech 4, 263-266 (2006).

104. Band offsets and chemical bonding states in N-plasma-treated HfSiON gate stacks studied by photoelectron spectroscopy and x-ray absorption spectroscopy
M. Oshima, H. Takahashi, J. Okabayashi, S. Toyoda, H. Kumigashira, M. Inoue, M. Mizutani, and J. Yugami
J. Appl. Phys. 100, 033709[1-5] (2006).

103. Mechanism of Hf-silicide formation at interface between poly-Si electrode and HfO2/Si gate stacks studied by photoemission and x-ray absorption spectroscopy
H. Takahashi, J. Okabayashi, S. Toyoda, H. Kumigashira, M. Oshima, K. Ikeda, G. L. Liu, Z. Liu, and K. Usuda
J. Appl. Phys. 99, 113710[1-6] (2006).

102. Annealing-temperature dependence: Mechanism of Hf silicidation in HfO2 gate insulators on Si by core-level photoemission spectroscopy
S. Toyoda, J. Okabayashi, H. Takahashi, H. Kumigashira, M. Oshima, M. Niwa, K. Usuda, G.L. Liu
J. Appl. Phys. 99, 014901[1-5] (2006).

101. Crystal structures and band offsets of ultrathin HfO2-Y2O3 composite films studied by photoemission and x-ray absorption spectroscopy
M. Komatsu, R. Yasuhara, H. Takahashi, S. Toyoda, H. Kumigashira, M. Oshima, D. Kukuruznyak, and T. Chikyow
Appl. Phys. Lett. 89, 172107[1-3] (2006).

100. Composition dependence of band offsets for (LaAlO3)1-x(Al2O3)x gate dielectrics determined by photoelectron spectroscopy and x-ray absorption spectroscopy;
R. Yasuhara, M. Komatsu, H. Takahashi, S. Toyoda, J. Okabayashi, H. Kumigashira, M. Oshima, D. Kukuruznyak, and T. Chikyow
Appl. Phys. Lett. 89, 122904[1-3] (2006).

99. Annealing-time dependence in interfacial reaction between poly-Si electrode and HfO2/Si gate stack studied by synchrotron radiation photoemission and x-ray absorption spectroscopy
H. Takahashi, J. Okabayashi, S. Toyoda, H. Kumigashira, M. Oshima, K. Ikeda, G. L. Liu, Z. Liu, and K. Usuda
Appl. Phys. Lett., 89, 012102[1-3] (2006), Ibid 89, 169902 (2006).

98. Angle-resolved photoemission spectroscopy of perovskite-type transition-metal oxides and their analyses using tight-binding band structure
H. Wadati, T. Yoshida, A. Chikamatsu, H. Kumigashira, M. Oshima, H. Eisaki, Z.-X. Shen, T. Mizokawa, and A. Fujimori
Phase Transitions 79, 617-635 (2006).

97. In-situ resonant photoemission characterization of La0.6Sr0.4MnO3 layers buried in insulating perovskite oxides
H. Kumigashira, R. Hashimoto, A. Chikamatsu, M. Oshima, T. Ohnishi, M. Lippmaa, H. Wadati and A. Fujimori, K. Ono, M. Kawasaki, and H. Koinuma
J. Appl. Phys. 99, 08S903[1-3] (2006).

96. Ferromagnetism stabilization of ultrathin SrRuO3 films; thickness-dependent physical properties
D. Toyota, I. Ohkubo, H. Kumigashira, M. Oshima, T. Ohnishi, M. Lippmaa, M. Kawasaki, and H. Koinuma
J. Appl. Phys. 99, 08N505[1-3] (2006).

95. Temperature-dependent soft x-ray photoemission and absorption studies of charge disproportionation in La1-xSrxFeO3
H. Wadati, A. Chikamatsu, R. Hashimoto, M. Takizawa, H. Kumigashira, A. Fujimori, M. Oshima, M. Lippmaa, M. Kawasaki, and H. Koinuma
J. Phys. Soc. Jpn. 75, 054704[1-6] (2006).

94. Observation of step-induced magnetic domain formation in La1-xSrxMnO3 thin films by photoelectron emission microscopy
T. Taniuchi, H. Kumigashira, M. Oshima, T. Wakita, T. Yokoya, M. Kubota, K. Ono, H. Akinaga, M. Lippmaa, M. Kawasaki, and H. Koinuma
Appl. Phys. Lett. 89, 112505[1-3] (2006).

93. Robust Ti4+ states in SrTiO3 layers of La0.6Sr0.4MnO3/SrTiO3/La0.6Sr0.4MnO3 junctions
H. Kumigashira, A. Chikamatsu, R. Hashimoto, M. Oshima, T. Ohnishi, M. Lippmaa, H. Wadati, A. Fujimori, K. Ono, M. Kawasaki, and H. Koinuma
Appl. Phys. Lett. 88, 192504[1-3] (2006).
Selected for the May 29, 2006 issue of Virtual Journal of Nanoscale Science & Technology.

92. Photoemission from buried interfaces in SrTiO3/LaTiO3 superlattices
M. Takizawa, H. Wadati, K. Tanaka, M. Hashimoto, T. Yoshida, A. Fujimori, A. Chikamatsu, H. Kumigashira, M. Oshima, K. Shibuya, T. Mihara, T. Ohnishi, M. Lippmaa, M. Kawasaki, H. Koinuma, S. Okamoto, and A. J. Millis
Phys. Rev. Lett. 97, 057601[1-4] (2006).

91. Chemical potential shift and spectral-weight transfer in Pr1-xCaxMnO3 revealed by photoemission spectroscopy
K. Ebata, H. Wadati, M. Takizawa, A. Fujimori, A. Chikamatsu, H. Kumigashira, M. Oshima, Y. Tomioka, and Y. Tokura
Phys. Rev. B 74, 064419[1-6] (2006).

90. Effect of Strong Localization of Doped Holes in Angle-Resolved Photoemission Spectra of La1-xSrxFeO3
H. Wadati, A. Chikamatsu, M. Takizawa, R. Hashimoto, H. Kumigashira, T. Yoshida, T. Mizokawa, A. Fujimori, M. Oshima, M. Lippmaa, M. Kawasaki, and H. Koinuma
Phys. Rev. B 74, 115114[1-5] (2006).

89. The band structure and Fermi surface of La0.6Sr0.4MnO3 thin films studied by in-situ angle-resolved photoemission spectroscopy
A. Chikamatsu, H. Wadati, H. Kumigashira, M. Oshima, A. Fujimori, N. Hamada, T. Ohnishi, M. Lippmaa, K. Ono, M. Kawasaki, and H. Koinuma
Phys. Rev. B 73, 195105[1-7] (2006).

2005

88. Chemical analysis of Hf-silicide clusters studied by photoemission spectroscopy
S. Toyoda, J. Okabayashi, H. Kumigashira, M. Oshima, K. Ono, M. Niwa, K. Usuda, and G. L. Liu
J. Electron Spectr. Rel. Phenom. 144-147, 487-490 (2005).

87. Crystallization and chemical structures with annealing in ZrO2 gate insulators studied by photoemission spectroscopy and x-ray absorption spectroscopy
J. Okabayashi, S. Toyoda, H. Kumigashira, M. Oshima, K. Usuda, M. Niwa, and G. L. Liu
J. Vac. Sci. Technol. A 23, 1554-1557 (2005).

86. Crystallization in HfO2 gate insulators with in situ annealing studied by valence-band photoemission and x-ray absorption spectroscopy
S. Toyoda, J. Okabayashi, H. Kumigashira, M. Oshima, K. Yamashita, M. Niwa, K. Usuda, and G. L. Liu
J. Appl. Phys. 97, 104507[1-4] (2005).

85. Precise determination of band offsets and chemical states in SiN/Si studied by photoemission spectroscopy and x-ray absorption spectrosocopy
S. Toyoda, J. Okabayashi, H. Kumigashira, M. Oshima, G.L. Liu, Z. Liu, K. Ikeda, and K. Usuda
Appl. Phys. Lett. 87, 102901[1-3] (2005).

84. Chemical reaction at the interface between polycrystalline Si electrodes and HfO2/Si gate dielectrics by annealing in ultra-high vacuum
H. Takahashi, S. Toyoda, J. Okabayashi, H. Kumigashira, M. Oshima, Y. Sugita, G. L. Liu, Z. Liu, and K. Usuda
Appl. Phys. Lett. 87, 012903[1-3] (2005).

83. Novel metallic ferromatnet Sr2CoO4
J. Matsuno, Y. Okimoto, Z. Fang, X. Z. Yu, Y. Matsui, N. Nagaosa, H. Kumigashira, M. Oshima, M. Kawasaki, and Y. Tokura
Thin solid films 486, 113-116 (2005).

82. In-situ photoemission study of La1-xSrxFeO3 thin films
H. Wadati, D. Kobayashi, A. Chikamatsu, R. Hashimoto, M. Takizawa, K. Horiba, H. Kumigashira, T. Mizokawa, A. Fujimori, M. Oshima, M. Lippmaa, M. Kawasaki, H. Koinuma
J. Electron Spectr. Rel. Phenom. 144-147, 877-880 (2005).

81. Hard x-ray photoemission study of Mn 2p core-levels of La1-xSrxMnO3 thin films
K. Horiba, M. Taguchi, N. Kamakura, K. Yamamoto, A. Chainani, Y. Takata, E. Ikenaga, H. Namatame, M. Taniguchi, A. Awaji, A. Takeuchi, D. Miwa, Y. Nishino, K. Tamasaku, T. Ishikawa, H. Kumigashira, M. Oshima, M. Lippmaa, M. Kawasaki, H. Koinuma, K. Kobayashi, and S. Shin
J. Electron Spectr. Rel. Phenom. 144-147, 557-559 (2005).

80. In-situ angle-resolved photoemission study on La1-xSrxMnO3 thin films grown by laser MBE
A. Chikamatsu, H. Wadati, M. Takizawa, R. Hashimoto, H. Kumigashira, M. Oshima, A. Fujimori, N. Hamada, T. Ohnishi, M. Lippmaa, K. Ono, M. Kawasaki, and H. Koinuma
J. Electron Spectr. Rel. Phenom. 144-147, 511-514 (2005).

79. Spectral evidence for inherent “dead layer” formation at La1-ySryFeO3/La1-xSrxMnO3 heterointerface
R. Hashimoto, A. Chikamatsu, H. Kumigashira, M. Oshima, N. Nakagawa, T. Ohnishi, M. Lippmaa, H. Wadati, A. Fujimori, K. Ono, M. Kawasaki, and H. Koinuma
J. Electron Spectr. Rel. Phenom. 144-147, 479-481 (2005).

78. Sr surface segregation and water cleaning for atomically-controlled SrTiO3 (001) substrates studied by photoemission spectroscopy
D. Kobayashi, R. Hashimoto, A. Chikamatsu, H. Kumigashira, M. Oshima, T. Ohnishi, M. Lippmaa, K. Ono, M. Kawasaki, and H. Koinuma
J. Electron Spectr. Rel. Phenom. 144-147, 443-447 (2005).

77. Thickness-dependent electronic structure of ultrathin SrRuO3 films studied by in situ photoemission spectroscopy
D. Toyota, I. Ohkubo, H. Kumigashira, M. Oshima, T. Ohnishi, M. Lippmaa, M.Takizawa, A. Fujimori, K. Ono, M. Kawasaki, and H. Koinuma
Appl. Phys. Lett. 87, 162508[1-3] (2005).

76. In vacuo photoemission study on atomically-controlled La1-xSrxMnO3 thin films: Composition dependence of the electronic structure
K. Horiba, A. Chikamatsu, H. Kumigashira, M. Oshima, N. Nakagawa, M. Lippmaa, K. Ono, M. Kawasaki, and H. Koinuma
Phys. Rev. B 71, 155420[1-8] (2005).

75. Valence changes associated with the metal-insulator transition in Bi1-xLaxNiO3
H. Wadati, M. Takizawa, T. T. Tran, K. Tanaka, T. Mizokawa, A. Fujimori, A. Chikamatsu, H. Kumigashira, M. Oshima, S. Ishiwata, M. Azuma, and M. Takano
Phys. Rev. B 72, 155103[1-5] (2005).

74. Manifestation of Correlation Effects in the photoemission spectra of Ca1-xSrxRuO3
M. Takizawa, D. Toyota, H. Wadati, A. Chikamatsu, H. Kumigashira, A. Fujimori, M. Oshima, Z. Fang, M. Lippmaa, M. Kawasaki, and H. Koinuma
Phys. Rev. B. 72, 060404(R)[1-4] (2005).

73. Hole-doping-induced changes in the electronic structure of La1-xSrxFeO3; soft x-ray photoemission and absorption study of epitaxial films
H. Wadati, D. Kobayashi, H. Kumigashira, K. Okazaki, T. Mizokawa, A. Fujimori, K. Horiba, M. Oshima, N. Hamada, M. Lippmaa, M. Kawasaki, and H. Koinuma
Phys. Rev. B 72, 035108[1-7] (2005).

2004

72. Chemistry and band offsets of HfO2 thin films revealed by photoelectronspectroscopy and x-ray absoroption spectroscopy
S. Toyoda, J. Okabayashi, H. Kumigashira,M. Oshima, K. Ono, M. Niwa, K. Usuda, and N. Hirashita
J. Electron Spectr. Rel. Phenom. 137-140, 141-144 (2004).

71. Chemical states and band offsets of NH3-treated Si oxynitride films studied by high-resolution photoelectron spectroscopy
M. Oshima, S. Toyoda, J. Okabayashi, H. Kumigashira, K. Ono, M. Niwa, K. Usuda, and N. Hirashita
J. Vac. Sci. Technol. A 22, 176-180 (2004).

70. Chemical reaction and metallic cluster formation by annealing-temperature controlling in ZrO2 gate insulator on Si
J. Okabayashi, S. Toyoda, H. Kumigashira, M. Oshima, M. Niwa, K. Usuda, and K. Liu
Appl. Phys. Lett. 85, 5959[1-3] (2004).

69. Effect interlayers and annealing on chemical states of HfO2 gate insulators studied by photoemission spectroscopy
S. Toyoda, J. Okabayashi, H. Kumigashira, M. Oshima, K. Ono, M. Niwa, K. Usuda, and G. L. Liu
Appl. Phys. Lett. 84, 2328-2330 (2004).

68. In-situ photoelectron spectroscopy of LaMnO3 and La0.6Sr0.4MnO3 thin films grown by laser molecular-beam expitaxy
M. Oshima, D. Kobayashi, K. Horiba, H. Ohguchi, H. Kumigashira, K. Ono, N. Nakagawa, M. Lippmaa, M. Kawasaki and H. Koinuma
J. Electron Spectr. Rel. Phenom. 137-140, 145-149 (2004).

67. In-situ photoemission spectroscopic study on La1-xSrxMnO3 thin films grown by combinatorial laser-MBE
H. Kumigashira, K. Horiba, H. Ohguchi, D. Kobayashi, M. Oshima, N. Nakagawa, T. Ohnishi, M. Lippmaa, K. Ono, M. Kawasaki, and H. Koinuma
J. Electron Spectr. Rel. Phenom. 136, 31-36 (2004).

66. Surface electronic structures of terminating-layer-controlled La0.6Sr0.4MnO3 thin films studied by in-situ synchrotron radiation photoemission spectroscopy
H. Kumigashira, K. Horiba, H. Ohguchi, M. Oshima, N. Nakagawa, M. Lippmaa, K. Ono, M. Kawasaki, and H. Koinuma
J. Magn. Magn. Mater. 272-276, 1120-1121 (2004).

65. In-situ synchrotron radiation angle-resolved photoemission study on La0.6Sr0.4MnO3 thin films grown by laser molecular beam epitaxy
H. Kumigashira, K. Horiba, H. Ohguchi, M. Oshima, N. Nakagawa, M. Lippmaa, K. Ono, M. Kawasaki, and H. Koinuma
J. Magn. Magn. Mater. 272-276, 434-435 (2004).

64. In-situ Mn 2p-3d resonant photoemission study on La0.6Sr0.4MnO3 epitaxial thin films grown by laser MBE
K. Horiba, H. Ohguchi, D. Kobayashi, H. Kumigashira, M. Oshima, N. Nakagawa, M. Lippmaa, K. Ono, M. Kawasaki, and H. Koinuma
J. Magn. Magn. Mater. 272-276, 436-437 (2004).

63. Ultrahigh-resolution angle-resolved photoemission study of LaX (X = S, Se, Te)
M. Nakayama, T. Ito, H. Kumigashira, H. Matsui, H. Komatsu, T. Takahashi, H. Aoki, and A. Ochiai
J. Magn. Magn. Mater. 272-276 (2004) 121-122.

62. Ultrahigh-resolution angle-resolved photoemission spectroscopy of La- and Ce-monochalcogenides
M. Nakayama, H. Aoki, A. Ochiai, T. Ito, H. Kumigashira, T. Takahashi, and H. Harima
Phys. Rev. B 69, 155116[1-8] (2004).

61. Photoemission and X-ray absorption study of two-dimensional triangular lattice superconductor: Na0.35CoO2: 1.3H2O
M. Kubota, K. Takada, T. Sasaki, H. Kumigashira, J. Okabayashi, M. Oshima, and K. Ono
Phys. Rev. B 70, 012508[1-4] (2004).

60. Nature of Well-Screened State in Hard X-ray Mn 2p Core-Level Photoemission of La1-xSrxMnO3 Films
K. Horiba, M. Taguchi, A. Chainani, Y. Takata, E. Ikenaga, H. Namatame, M. Taniguchi, A. Awaji, A. Takeuchi, D. Miwa, Y. Nishino, K. Tamasaku, T. Ishikawa, H. Kumigashira, M. Oshima, M. Lippmaa, M. Kawasaki, H. Koinuma, K. Kobayashi, and S. Shin
Phys. Rev. Lett. 93, 236401[1-4] (2004).

59. High-resolution synchrotron radiation photoemission characterization for atomically-controlled SrTiO3(001) substrate surfaces subjected to various surface treatments
D. Kobayashi, H. Kumigashira, M. Oshima, T. Ohnishi, M. Lippmaa, K. Ono, M. Kawasaki, and H. Koinuma
J. Appl. Phys. 96, 7183-7188 (2004).

58. Inherent charge transfer layer formation at La0.6Sr0.4FeO3/La0.6Sr0.4MnO3 heterointerface
H. Kumigashira, D. Kobayashi, R. Hashimoto, A. Chikamatsu, M. Oshima, N. Nakagawa, T. Ohnishi, M. Lippmaa, H. Wadati, A. Fujimori, K. Ono, M. Kawasaki, and H. Koinuma
Appl. Phys. Lett. 84, 5353-5355 (2004).

57. Preparation of thermally stable TiO2-terminated SrTiO3 (100) substrate surface
T. Ohnishi, K. Shibuya, M. Lippmaa, D. Kobayashi, H. Kumigashira, M. Oshima, and H. Koinuma
Appl. Phys. Lett. 85, 272-274 (2004).

2003

56. Interfacial chemistry and structures of ultrathin Si oxynitride films
M. Oshima, K. Kimura, K. Ono, K. Horiba, K. Nakamura, H. Kumigashira, J.-H. Oh, M. Niwa, K. Usuda, and N. Hirashita
Appl. Surf. Sci. 216, 291-295 (2003).

55. Effect of nitrogen doping into SiO2 studied by photoemission spectroscopy
S. Toyoda, J. Okabayashi, H. Kumigashira, M. Oshima, K. Ono, M. Niwa, K. Usuda, and N. Hirashita
Appl. Phys. Lett. 83, 5449-5451 (2003).

54. Chemistry and band offsets of HfO2 thin films for gate insulators
M. Oshima, S. Toyoda, T. Okumura, J. Okabayashi, H. Kumigashira, K. Ono, M. Niwa, K. Usuda, and N. Hirashita
Appl. Phys. Lett. 83, 2172-2174 (2003).

53. In-situ photoemission characterization of terminating-layer-controlled La0.6Sr0.4MnO3 thin films
H. Kumigashira, K. Horiba, H. Ohguchi, K. Ono, M. Oshima, N. Nakagawa, M. Lippmaa, M. Kawasaki, and H. Koinuma
Appl. Phys. Lett. 82, 3430-3432 (2003).

52. A high-resolution synchrotron-radiation angle-resolved photoemission system combined with a laser molecular beam epitaxy
K. Horiba, H. Ohguchi, H. Kumigashira, M. Oshima, K. Ono, N. Nakagawa, M. Lippmaa, M. Kawasaki and H. Koinuma
Rev. Sci. Instrum. 74, 3406-3412 (2003).

2002

51. Ultrahigh-resolution photoemission spectroscopy on UGe2
T. Ito, H. Kumigashira, S. Souma, T. Takahashi, Y. Haga, and Y. Onuki
J. Phys. Soc. Jpn. 71, Suppl. 261-263 (2002).

50. High-resolution angle-resolved photoemission study of BaCo1-xNixS2
T. Sato, H. Kumigashira,D. Ionel, T. Ito, T. Takahashi, I. Hase, H. Ding, J. C. Campuzano, and S. Shamoto
Surface Review and Letters 9, 1127-1134 (2002).

49. High-resolution angle-resolved photoemission study of η-Mo4O11
H. Fujisawa, H. Kumigashira, T. Takahashi, R. Kurita, and M. Koyano
Surface Review and Letters 9, 1041-1046 (2002).

48. Resonant angle-resolved photoemission study of heavy fermion material CeRu2Si2
H. Kumigashira, T. Ito, T. Takahashi, A. Kaminski, J. C. Campuzano, and Y. Onuki
Physica B 312-313, 658-659 (2002).

47. Ultrahigh-resolution angle-resolved photoemission spectroscopy of UPd3
T. Ito, H. Kumigashira, S. Souma, T. Takahashi, Y. Tokiwa, Y. Haga, and Y. Onuki
Physica B 312-313, 653-654 (2002).

46. Direct observation of pseudogap of SmB6 using ultrahigh-resolution photoemission spectroscopy
S. Souma, H. Kumigashira, T. Ito, T. Takahashi, and S. Kunii
Physica B 312-313, 329-330 (2002).

45. Hybridization gap in Kondo insulators CeRhSb and CeRhAs studied by ultrahigh-resolution photoemission spectroscopy
H. Kumigashira, T. Takahashi, S. Yoshii, and M. Kasaya
Physica B 312-313, 208-209 (2002).

44. Band structure of UPd3 studied by ultrahigh-resolution angle-resolved photoemission spectroscopy
T. Ito, H. Kumigashira, S. Souma, T. Takahashi, Y. Haga, Y. Tokiwa, and Y. Onuki
Phys. Rev. B 66, 245110 [1-6] (2002).

43. Electronic structure of ‘black’ SmS: II. Angle-resolved photoemission spectroscopy
T. Ito, A. Chainani, H. Kumigashira, T. Takahashi, and N. K. Sato
Phys. Rev. B 65, 155202 [1-4] (2002).

42. Electronic structure of ‘black’ SmS: I. 4d-4f resonance and angle-integrated valence-band photoemission spectroscopy
A. Chainani, H. Kumigashira, T. Ito, T. Sato, T. Takahashi, T. Yokoya, T. Higuchi, T. Takeuchi, S. Shin, and N. K. Sato
Phys. Rev. B 65, 155201 [1-7] (2002).

2001

41. Evolution of metallic states from Hubbard band in two-dimensional Mott-system BaCo1-xNixSi2
T. Sato, H. Kumigashira, D. Ionel, T. Takahashi, I. Hase, H. Ding, J. C. Campuzano, and S. Shamoto
Phys. Rev. B 64, 075103 [1-6] (2001).

40. Hybridized Nature of Pseudogap in Kondo Insulators CeRhSb and CeRhAs
H. Kumigashira, T. Takahashi, S. Yoshii, and M. Kasaya
Phys. Rev. Lett. 87, 067206 [1-4] (2001).

2000

39. Ultrahigh-resolution photoemission study of CePd3 : absence of Kondo insulator gap
S. Souma, H. Kumigashira, T. Ito, T. Takahashi, and M. Kasaya
J. Electron Spectroscopy and Related Phenomena 114-116, 735-740 (2001).

38. Crystal-field splitting in CeB6 observed by ultrahigh-resolution photoemission spectroscopy
S. Souma, H. Kumigashira, T. Ito, T. Sato, T. Takahashi, and S. Kunii
J. Electron Spectroscopy and Related Phenomena 114-116, 729-734 (2001).

37. Angle-resolved photoemission study of quasi one-dimensional conductor Nb3Te4
H. Fujisawa, H. Kumigashira, T. Takahashi, H. Kaneko, Y. Ishihara, and H. Okamoto
J. Electron Spectroscopy and Related Phenomena 114-116, 647-652 (2001).

36. High-resolution angle-resolved photoemission study of UN and USb: Dual character of 5f electrons
T. Ito, H. Kumigashira, S. Souma, T. Takahashi, and T. Suzuki
J. Magn. Magn. Mater. 226-230, 68-69 (2001).

35. Electronic structure and Fermi surface of UC studied by high-resolution angle-resolved photoemission spectroscopy
T. Ito, H. Kumigashira, T. Takahashi, E. Yamamoto, Y. Haga, and Y. Onuki
J. Magn. Magn. Mater. 226-230, 40-41 (2001).

34. Electronic band structure and Fermi surface of URu2Si2 studied by high-resolution angle-resolved photoemission spectroscopy
T. Ito, H. Kumigashira, T. Takahashi, Y. Haga, E. Yamamoto, T. Honma, H. Ohkuni, and Y. Onuki
Physica B 281&282, 727-728 (2000).

33. Pseudogap formation in Kondo insulators CeRhSb and CeRhAs studied by ultrahigh-resolution photoemission spectroscopy
H. Kumigashira, T. Sato, T. Yokoya, T. Takahashi, S. Yoshii, and M. Kasaya
Physica B 281&282, 284-285 (2000).

32. High-resolution angle-resolved photoemission study of USb; Dual character of 5f electrons
H. Kumigashira, T. Ito, A. Ashihara, Hyeong-Do Kim, H. Aoki, T. Suzuki, H. Yamagami, T. Takahashi, and A. Ochiai
Phys. Rev. B 61, 15707-15713 (2000).

1999

31. Ultrahigh-Resoluton Photoemission Study of Kondo Insulators CeRhAs and CeRhSb
H. Kumigashira, T. Sato, T. Yokoya, T. Takahashi, S. Yoshii, and M. Kasaya
J. Jpn. Apl. Phys. Series 11, 91-93 (1999).

30. High-Resolution Angle-Resolved Photoemission Study of URu2Si2
T. Ito, H. Kumigashira, T. Takahashi, Y. Haga, E. Yamamoto, T. Honma, J. Ohkuni, and Y. Onuki
J. Jpn. Apl. Phys. Series 11, 68-70 (1999).

29. High-resolution angle-resolved photoemission study of RSb (R = La, Ce, U)
H. Kumigashira, Hyeong-Do Kim, T. Ito, A. Ashihara, T. Takahashi, H. Aoki, A. Ochiai, and T. Suzuki
Physica B 259-261, 1124-1125 (1999).

28. Angle-resolved photoemission spectroscopy of UPt3
T. Ito, H. Kumigashira, Hyeong-Do Kim, T. Takahashi,N. Kimura, Y. Haga, E. Yamamoto, Y. Onuki, and H. Harima
Physica B 259-261, 1122-1123 (1999).

27. Band structure and Fermi surface of URu2Si2 studied by high-resolution angle-resolved photoemission spectroscopy
T. Ito, H. Kumigashira, T. Takahashi, Y. Haga, E. Yamamoto, T. Honma, H. Ohkuni, and Y. Onuki
Phys. Rev. B 60, 13390-13395 (1999).

26. Surface and bulk 4f photoemission spectra of CeIr2
Hyeong-Do Kim, H. Kumigashira, See-Hun Yang, T. Takahashi, H. Aoki, T. Suzuki, G. Chiaia, O. Tjernberg, H. Nylén, I. Lindau, and A. Ochiai
Phys. Rev. B 59, 12294-12297 (1999).

25. High-resolution angle-resolved photoemission study of the heavy-fermion superconductor UPt3
T. Ito, H. Kumigashira, Hyeong-Do Kim, T. Takahashi,N. Kimura, Y. Haga, E. Yamamoto, Y. Onuki, and H. Harima
Phys. Rev. B 59, 8923-8929 (1999).

24. Spectral Evidence for Pseudogap Formation in Kondo Insulators CeRhAs and CeRhSb
H. Kumigashira, T. Sato, T. Yokoya, T. Takahashi, S. Yoshii, and M. Kasaya
Phys. Rev. Lett. 82, 1943-1946 (1999).

1998

23. High-resolution angle-resolved photoemission study of CeSb and USb
T. Takahashi, H. Kumigashira, T. Ito, A. Ashihara, H.-D. Kim, H. Aoki, A. Ochiai, and T. Suzuki
J. Electron Spectroscopy and Related Phenomena 92, 65-69 (1998).

22. Resonant photoemission studies of thulium monochalcogenides around the Tm 3d threshold
T. Kinoshita, Y. Ufuktepe, K. G. Nath, S. Kimura, H. Kumigashira, T. Takahashi, T. Matsumura, T. Suzuki, H. Ogasawara, and A. Kotani
J. Electron Spectroscopy and Related Phenomena 88-91, 377-384 (1998).

21. 4d Core-level resonant photoemission spectroscopy of thulium monochalcogenides around the Tm 3d threshold
K. G. Nath, Y. Ufuktepe, S. Kimura, T. Kinoshita, H. Kumigashira, T. Takahashi, T. Matsumura, T. Suzuki, H. Ogasawara, and A. Kotani
J. Electron Spectroscopy and Related Phenomena 88-91, 369-375 (1998).

20. Surface and bulk 4f electronic structure of CeIn3 and CeSn3
H. Kumigashira, H.-D. Kim, T. Takahashi, O. Sakai, M. Kasaya, O. Tjernberg, G. Chiaia, L. Duò, and I. Lindau
J. Magn. Magn. Mater. 177-181, 1035-1036 (1998).

19. Magnetic phase transition of CeSb studied by high-resolution angle-resolved photoemission
T. Takahashi, H. Kumigashira, H.-D. Kim, A. Ashihara, A. Chainani, T. Yokoya, A. Uesawa, and T. Suzuki
J. Magn. Magn. Mater. 177-181, 1027-1028 (1998).

18. 4d-4f and 3d-4f resonant photoemission of TmX (X = S, Se, Te)
S. Kimura, Y. Ufuktepe, K. G. Nath, T. Kinoshita, H. Kumigashira, T. Takahashi, T. Matsumura, T. Suzuki, H. Ogasawara, and A. Kotani
J. Magn. Magn. Mater. 177-181, 349-350 (1998).

17. Resonant Photoemission Studies of Thulium Monochalcogenides around the Tm 4d Threshold
Y. Ufuktepe, S. Kimura, T. Kinoshita, K. G. Nath, H. Kumigashira, T. Takahashi, T. Matsumura, T. Suzuki, H. Ogasawara, and A. Kotani
J. Phys. Soc. Jpn. 67, 2018-2026 (1998).

16. Electronic structure of CeSe probed by resonant photoemission spectroscopy: A test case for the single-impurity Anderson Hamiltonian
G. Chiaia, L. Duò, O. Tjernberg, M. Göthelid, M. Björkqvist, H. Kumigashira, S.-H. Yang, T. Takahashi, T. Suzuki, and I. Lindau
Phys. Rev. B 57, 12030-12035 (1998).

15. High-resolution angle-resolved photoemission study of LaSb
H. Kumigashira, Hyeong-Do Kim, T. Ito, A. Ashihara, T. Takahashi,T. Suzuki, M. Nishimura, O. Sakai, Y. Kaneta, and H. Harima
Phys. Rev. B 58, 7675-7680 (1998).

14. High-resolution photoemission study of V2-yO3
Hyeong-Do Kim, H. Kumigashira, A. Ashihara, T. Takahashi, and Y. Ueda
Phys. Rev. B 57, 1316-1319 (1998).

1997

13. High-resolution angle-resolved photoemission study of Sr14-XCaXCu24O41 (x = 0 and 6)
T. Yokoya, H.-D. Kim, A. Ashihara, H. Kumigashira, H. Fujisawa, T. Takahashi, M. Uehara, T. Nagata, and J. Akimitu
Physica C 282-287, 997-998 (1997).

12. Temperature dependence of the electronic structure of the charge-ordering manganite Pr0.5Sr0.5MnO3
A. Chainani, H. Kumigashira, T. Takahashi, Y. Tomioka, H. Kuwahara, and T. Tokura
Phys. Rev. B 56, R15513-R15516 (1997).

11. Paramagnetic-to-antiferroparamagnetic phase transition of CeSb studied by high-resolution angle-resolved photoemission
H. Kumigashira, H.-D. Kim, A. Ashihara, A. Chainani, T. Yokoya, T. Takahashi, A. Uesawa, and T. Suzuki
Phys. Rev. B 56, 13654-13657 (1997).

10. High-resolution angle-resolved photoemission study of CeP: Narrow-band formation of 4f electrons
H. Kumigashira, S.-H. Yang, T. Yokoya, A. Chainani, T. Takahashi, A. Uesawa, and T. Suzuki
Phys. Rev. B 55, R3355-R3357 (1997).

9. Surface and bulk 4f-photoemission spectra of CeIn3 and CeSn3
H.-D. Kim, O. Tjernberg, G. Chiaia, H. Kumigashira, T. Takahashi, L. Duò, O. Sakai, M. Kasaya, and I. Lindau
Phys. Rev. B 56, 1620-1624 (1997).

1996年度

8. High-resolution photoemission study of deutrated dimethyl-dicyanoquinoinediimine-Cu compound; (DMe-DCNQI)2Cu
T. Takahashi, T. Yokoya, A. Chainani, A. Tanaka, H. Kumigashira, O. Akaki, and R. Kato
J. Electron Spectroscopy and Related Phenomena 78, 441-444 (1996).

7. High-resolution angle-resolved photoemission study of non-cuprate two-dimensional superconductor Sr2RuO4
T. Yokoya, O. Akaki, H. Kumigashira, A. Chainani, T. Takahashi, H. Katayama-Yoshida, M. Kasai, and Y. Tokura
J. Electron Spectroscopy and Related Phenomena 78, 171-174 (1996).

6. High-resolution photoemission study of UNi2Al3 and URu2Si2
S.-H. Yang, H. Kumigashira, T. Yokoya, A. chainani, N. Sato, T. Komatsubara, S.-J. Oh, and T. Takahashi
J. Electron Spectroscopy and Related Phenomena 78, 143-145 (1996).

5. High-Resolution Photoemission Study of UNi2Al3 and URu2Si2
S.-H. Yang, H. Kumigashira, T. Yokoya, A. Chainani, T. Takahashi, S.-J. Oh, N. Sato, and T. Komatubara
J. Phys. Soc. Jpn. 65, 2685-2689 (1996).

4. High-resolution angle-resolved photoemission spectroscopy of CeBi
H. Kumigashira, S.-H. Yang, T. Yokoya, A. Chainani, T. Takahashi, A. Uesawa, T. Suzuki, O. Sakai, and Y. Kaneta
Phys. Rev. B 54, 9341-9345 (1996).

3. High-resolution photoemission study of CeRu2: The dual character of 4f electrons
S.-H. Yang, H. Kumigashira, T. Yokoya, A. Chainani, T. Takahashi, H. Takeya, and K. Kadowaki
Phys. Rev. B 53, R11946-R11948 (1996).

2. High-energy-resolution photoemission study of CeNiSi2 and CePtSi2
H. Kumigashira, A. Chainani, T. Yokoya, O. Akaki, T. Takahashi, M. Ito, M. Kasaya, and O. Sakai
Phys. Rev. B 53, 2565-2568 (1996).

1. Cooperative effects of electron correlation and charge ordering on the metal-insulator transition in quasi-one-dimensional deutrated (DMe-DCNQI)2Cu
T. Takahashi, T. Yokoya, A. Chainani, H. Kumigashira, O. Akaki, and R. Kato
Phys. Rev. B 53, 1790-1794 (1996).