論文リスト

2016年度 2015年度 2014年度 2013年度 
2012年度 2011年度 2010年度 2009年度 2008年度
2007年度 2006年度 2005年度 2004年度 2003年度
2002年度以前

2016年度

250. Spatial distribution of transferred charges across the heterointerface between perovskite transition metal oxides LaNiO3 and LaMnO3
M. Kitamura, K. Horiba, M. Kobayashi, E. Sakai, M. Minohara, T. Mitsuhashi, A. Fujimori, T. Nagai, H. Fujioka, and H. Kumigashira
Appl. Rev. Lett. 108, 111603 (2016).

249. Isotropic Kink and Quasiparticle Excitations in the Three-Dimensional Perovskite Manganite La0.6Sr0.4MnO3
K. Horiba, M. Kitamura, K. Yoshimatsu, M. Minohara, E. Sakai, M. Kobayashi, A. Fujimori, and H. Kumigashira
Phys. Rev. Lett. 116, 076401 (2016).

2015年度

248. Origin of the Anomalous Mass Renormalization in Metallic Quantum Well States of Strongly Correlated Oxide SrVO3
M. Kobayashi, K. Yoshimatsu, E. Sakai, M. Kitamura, K. Horiba, A. Fujimori, and H. Kumigashira
Phys. Rev. Lett. 115, 076801 (2015).

247. Determination of band diagram for a p-n junction between Mott insulator LaMnO3 and band insulator Nb:SrTiO3
M. Kitamura, M. Kobayashi, E. Sakai, R. Takahashi, M. Lippmaa, K. Horiba, H. Fujioka, and H. Kumigashira
Appl. Phys. Lett. 106, 061605[1-5] (2015).

246. Controlling band alignments by artificial interface dipoles at perovskite heterointerfaces
T. Yajima, Y. Hikita, M. Minohara, C. Bell, J. A. Mundy, L. F. Kourkoutis, D. A. Muller, H. Kumigashira, M. Oshima, and H. Y. Hwang
Nat. Commun. 6, 6759 (2015).

245. Enhanced Electrical Transparency by Ultra-Thin LaAlO3 Insertion at Oxide Metal/Semiconductor Heterointerfaces
T. Yajima, M. Minohara, C. Bell, H. Kumigashira, M. Oshima, H. Y. Hwang, and Y. Hikita
Nano Lett. 15, 1622 – 1626 (2015).

244. Direct Growth of Metallic TiH2 Thin Films by Pulsed-Laser Deposition
K. Yoshimatsu, T. Suzuki, N. Tsuchimine, K. Horiba, H. Kumigashira, T. Oshima, and A. Ohtomo
Appl. Phys. Express 8, 035801[1-4] (2015).

243. Synthesis and magnetic properties of double-perovskite oxides La2MnFeO6 thin films
K. Yoshimatsu, K. Nogami, K. Watarai, K. Horiba, H. Kumigashira, O. Sakata, T. Oshima, and A. Ohtomo
Phys. Rev. B 91, 054421[1-6] (2015)

242. Surface-Termination-Dependent Electron Tunneling in Ferroelectric Junctions
H. Yamada, A. Tsurumaki-Fukuchi, M. Kobayashi, T. Nagai, Y. Toyosaki, H. Kumigashira, and A. Sawa
Adv. Funct. Mater. 25, 2708–2714 (2015).

241. Effects of Cr substitution on the magnetic and transport properties and electronic states of SrRuO3 epitaxial thin films
K. Kurita, A. Chikamatsu, K. Shigematsu, T. Katayama, H. Kumigashira, T. Fukumura, and T. Hasegawa
Phys. Rev. B 92, 115153[1-6] (2015).

240. Thickness-dependent magnetic properties and strain-induced orbital magnetic moment in SrRuO3 thin fims
K. Ishigami, K. Yoshimatsu, D. Toyota, M. Takizawa, T. Yoshida, G. Shibata, T. Harano, Y. Takahashi, T. Kadono, V. K. Verma, V. R. Singh, Y. Takeda, T. Okane, Y. Saitoh, H. Yamagami, T. Koide, M. Oshima, H. Kumigashira, and A. Fujimori
Phys. Rev. B 92, 064402[1-5] (2015).

239. Spin-glass behaviors in carrier polarity controlled Fe3-xTixO4 semiconductor thin films
H. Yamahara, M. Seki, M. Adachi, M. Takahashi, H. Nasu, K. Horiba, H. Kumigashira, and H. Tabata
J. Appl. Phys. 118, 063905[1-7] (2015).

238. Electronic structure of Ti1-xFexO2-d thin film with oxygen vacancies probed by Soft-X-Ray Spectroscopy
K. Usui, S. Yamaguchi, N. Suzuki, Y. Shimazu, T. Tsuchiya, E. Sakai, M. Kobayashi, K. Horiba, H. Kumigashira, and T. Higuchi
Jpn. J. Appl. Phys. 54, 06FJ07[1-4] (2015).

237. Metal-Insulator Transition of c-Axis Controlled V2O3 Thin Film
Y. Shimazu, T. Okumura, T. Tsuchiya, A. Shimada, K. Tanabe, K. Tokiwa, M. Kobayashi, K. Horiba, H. Kumigashira, and T. Higuchi
J. Phys. Soc. Jpn. 84, 064701[1-5] (2015).

236. Electronic structure and oxygen ion conductivity of as-deposited Ce0.90Sm0.10O2-δ thin film prepared by RF magnetron sputtering
S. Yamaguchi, Y. Tasaki, M. Kobayashi, K. Horiba, H. Kumigashira, and T. Higuchi
Jpn. J. Appl. Phys. 54, 06FJ04[1-5] (2015).

235. Electronic Structure for b-Axis Orientated of VO2 Thin Film with Mixed-Valentce States Proved by Soft X-ray Spectroscopy
T. Suetsugu, Y. Shimazu, M. Kobayashi, E. Sakai, H. Kumigashira, and T. Higuchi
J. Phys. Soc. Jpn. 84, 064715[1-4] (2015).

234. Hole-ion Mixed Conduction of Orientation-Controlled BaPrO3-δ Thin Film with Mixed Valence States
T. Higuchi, A. Oda, T. Tsuchiya, T. Suetsugu, N. Suzuki, S. Yamaguchi, M. Minohara, M. Kobayashi, K. Horiba, and H. Kumigashira
J. Phys. Soc. Jpn. 84, 114708[1-5] (2015).

233. Quadratic Fermi Node in a 3D Strongly Correlated Semimetal
T. Kondo, M. Nakayama, R. Chen, J.J. Ishikawa, E.-G. Moon, T. Yamamoto, Y. Ota, W. Malaeb, H. Kanai, Y. Nakashima, Y. Ishida, R. Yoshida, H. Yamamoto, M. Matsunami, S. Kimura, N. Inami, K. Ono, H. Kumigashira, S. Nakatsuji, L. Balents, and S. Shin
Nat. Comnun. 6, 10042[1-8] (2015).

232. Comparative ARPES study on iron-platinum-arsenide superconductor Ca10(Pt4As8)(Fe2-xPtxAs2)5 (x = 0.25 and 0.42)
M. Sunagawa, R. Yoshida, T. Ishiga, K. Tsubota, T. Jabuchi, J. Sonoyama, S. Kaiya, D. Mitsuoka, K. Kudo, M. Nohara, K. Ono, H. Kumigashira, T. Oguchi, T. Wakita, Y. Muraoka, and T. Yokoya
J. Phys. Soc. Jpn. 84, 055001[1-2] (2015).

231. Photoemission and X-ray Absorption Studies of the Diluted Magnetic Semiconductor Ba1-xKx(Zn1-yMny)2As2 Isostructural to Fe-based Superconductors
H. Suzuki, K. Zhao, G. Shibata, Y. Takahashi, S. Sakamoto, K. Yoshimatsu, B. J. Chen, H. Kumigashira, F.-H. Chang, H.-J. Lin, D. J. Huang, C. T. Chen, Bo Gu, S. Maekawa, Y. J. Uemura, C. Q. Jin and A. Fujimori
Phys. Rev. B 91, 140401R[1-5] (2015).

230. Fermi Surfaces and p-d Hybridization in the Diluted Magnetic Semiconductor Ba1-xKx(Zn1-yMny)2As2 Studied by Soft X-ray Angle Resolved Photoemission Spectroscopy
H. Suzuki, G. Q. Zhao, K. Zhao, B. J. Chen, M. Horio, K. Koshiishi, J. Xu, M. Kobayashi, M. Minohara, E. Sakai, K. Horiba, H. Kumigashira, B. Gu, S. Maekawa, Y. J. Uemura, C. Q. Jin, and A. Fujimori
Phys. Rev. B 92, 235120[1-5] (2015).

229. Dependence of electron correlation strength in Fe1+yTe1-xSexon Se content
L. C. C. Ambolode II, K. Okazaki, M. Horio, H. Suzuki, L. Liu, S. Ideta, T. Yoshida, T. Mikami, T. Kakeshita, S. Uchida, K. Ono, H. Kumigashira, M. Hashimoto, D. -H. Lu, Z. -X. Shen, and A. Fujimori
Phys. Rev. B 92, 035104[1–5] (2015).

228. In-plane electronic anisotropy in the antiferromagnetic orthorhombic phase of isovalent-substituted Ba(Fe1−xRux)2As2
L. Liu, T. Mikami, S. Ishida, K. Koshiishi, K. Okazaki, T. Yoshida, H. Suzuki, M. Horio, L. C. C. Ambolode, II, J. Xu, H. Kumigashira, K. Ono, M. Nakajima, K. Kihou, C. H. Lee, A. Iyo, H. Eisaki, T. Kakeshita, S. Uchida, and A. Fujimori
Phys. Rev. B 92, 094503[1–5] (2015).

227. Proton conduction of BaCe0.90Y0.10O3-δ thin film with lattice distortion
T. Higuchi, T. Owaku, Y. Iida, E. Sakai, M. Kobayashi, and H. Kumigashira
Solid State Ionics 270, 1-5 (2015).

2014年度

226. Bandwidth-controlled metal-insulator transition in epitaxial PrNiO3 ultrathin films induced by dimensional crossover
E. Sakai, K. Yoshimatsu, M. Tamamitsu, K. Horiba, A. Fujimori, M. Oshima, and H. Kumigashira
Appl. Phys. Lett. 104, 171609[1-4] (2014).

225. Thickness-dependent ferromagnetic metal-to-paramagnetic insulator transition in La0.6Sr0.4MnO3 thin films studied by x-ray magnetic circular dichroism
G. Shibata, K. Yoshimatsu, E. Sakai, V. R. Singh, V. K. Verma, K. Ishigami, T. Harano, T. Kadono, Y. Takeda, T. Okane, Y. Saitoh, H. Yamagami, A. Sawa, H. Kumigashira, M. Oshima, T. Koide, and A. Fujimori
Phys. Rev. B 89, 235123[1-5] (2014).

224. Orbital correlations and dimensional crossover in epitaxial Pr0.5Ca0.5MnO3/La0.5Sr0.5MnO3 superlattices
H. Wadati, J. Okamoto, M. Garganourakis, V. Scagnoli, U. Staub, E. Sakai, H. Kumigashira, T. Sugiyama, E. Ikenaga, M. Nakamura, M. Kawasaki, and Y Tokura
New J. Phys. 16, 073044 [1-10] (2014).

223. Photoemission and DMFT study of electronic correlations in SrMoO3: effects of Hund’s rule coupling and possible plasmonic side-band
H. Wadati, J. Mravlje, K. Yoshimatsu, H. Kumigashira, M. Oshima, T. Sugiyama, E. Ikenaga, A. Fujimori, A. Georges, A. Radetinac, K. S. Takahashi, M. Kawasaki, and Y. Tokura
Phys. Rev. B 90, 205131[1-8] (2014).

222. Metallic conductivity in infinite-layer strontium iron oxide thin films reduced by calcium hydride
T. Katayama, A. Chikamatsu, Y. Hirose, H. Kumigashira, T. Fukumura, and T. Hasegawa
J. Phys. D: Appl. Phys. 47, 135304[1-6] (2014).

221. Electronic Structure and Photoelectrochemical Properties of an Ir-doped SrTiO3 Photocatalyst
S. Kawasaki, R. Takahashi, K. Akagi, J. Yoshinobu, F. Komori, K. Horiba, H. Kumigashira, K. Iwashina, A. Kudo, and M. Lippmaa
J. Phys. Chem. C 118, 20222 – 20228 (2014).

220. Growth of TiO2-δ thin film by RF magnetron sputtering using oxygen radical and Ti-metal
Y. Shimazu, T. Okumura, E. Sakai, H. Kumigasira, M. Okawa, T. Saitoh, and T. Higuchi
Jpn. J. Appl. Phys. 53, 06JG01[1-4] (2014).

219. Electrical conductivity of Sc-doped TiO2 thin film prepared by RF magnetron sputtering
T. Inoue, T. Okumura, Y. Shimazu, E. Sakai, H. Kumigashira and T. Higuchi
Jpn. J. Appl. Phys. 53, 06JG03[1-4] (2014).

218. Electronic structure of V2O3 thin film prepared by RF magnetron sputtering using oxygen radical and V-metal
Y. Shimazu, T. Okumura, A. Shimada, K. Tanabe, K. Tokiwa, E. Sakai, H. Kumigasira and T. Higuchi
Jpn. J. Appl. Phys. 53, 06JG05[1-3] (2014).

217. Persistent insulator to metal transition of a VO2 thin film by soft x-ray irradiation
Y. Muraoka, H. Nagao, S. Katayama, T. Wakita, M. Hirai, T. Yokoya, H. Kumigashira, M. Oshima
Jpn. J. Appl. Phys. 53, 05FB09[1-4] (2014).

216. Soft x-ray photoemission study of new BiS2-layered superconductor LaO1-xFxBiS2
S. Nagira, J. Sonoyama, T. Wakita, M. Sunagawa, Y. Izumi, T. Muro, H. Kumigashira, M. Oshima, K. Deguchi, H. Okazaki, Y. Takano, O. Miura, Y. Mizuguchi, K. Suzuki, H. Usui, K. Kuroki, K. Okada, Y. Muraoka, and T. Yokoya
J. Phys. Soc. Jpn. 83, 033703[1-5] (2014).

215. Electronic Structure of CeM2Al10 (M = Fe, Ru, and Os) Studied by Soft X-ray Resonant and High-Resolution Photoemission Spectroscopy
T. Ishiga, T. Wakita, R. Yoshida, H. Okazaki, K. Tsubota, M. Sunagawa, K. Uenaka, K. Okada, H. Kumigashira, M. Oshima, K. Yutani, Y. Muro, T. Takabatake, Y. Muraoka, and T. Yokoya
J. Phys. Soc. Jpn. 83, 094717[1-6] (2014).

214. Characteristic two dimensional Fermi surface topology of high-Tc iron-based superconductors
M. Sunagawa, T. Ishiga, K. Tsubota, T. Jabuchi, J. Sonoyama, K. Iba, K. Kudo, M. Nohara, K. Ono, H. Kumigashira, T. Matsushita, M. Arita, K. Shimada, H. Namatame, M. Taniguchi, T. Wakita, Y. Muraoka, and T. Yokoya
Scientific Report 4, 4381[1-6] (2014).

213. Proximity to Fermi-surface topological change in superconductor LaO0.54F0.46BiS2
K. Terashima, J. Sonoyama, T. Wakita, M. Sunagawa, K. Ono, H. Kumigashira, T. Muro, M. Nagao, S. Watauchi, I. Tanaka, H. Okazaki, Y. Takano, O. Miura, Y. Mizuguchi, H. Usui, K. Suzuki, K. Kuroki, Y. Muraoka, and T. Yokoya
Phys. Rev. B 90, 220512R[1-5] (2014).

212. Pseudogap Formation above the superconducting dome in iron-pnictides
T. Shimojima, T. Sonobe, W. Malaeb, K. Shinada, A. Chainani, S. Shin, T. Yoshida, S. Ideta, A. Fujimori, H. Kumigashira, K Ono, Y. Nakashima, H. Anzai, M. Arita, A. Ino, H. Namatame, M. Taniguchi, M. Nakajima, S. Uchida, Y. Tomioka, T.Ito, K. Kihou, C. H. Lee, A. Iyo, H. Eisaki, K. Ohgushi, S. Kasahara, T. Terashima, H. Ikeda, T. Shibauchi, Y. Matsuda, K. Ishizaka
Phys. Rev. B 89, 045101[1-10] (2014).

211. Lifting of xz/yz orbital degeneracy atthe structural transition in detwinned FeSe
T. Shimojima, Y. Suzuki, T. Sonobe, A. Nakamura, M. Sakano, J. Omachi, K. Yoshioka, M. Kuwata-Gonokami, K. Ono, H. Kumigashira, A. E. Böhmer, F. Hardy, T. Wolf, C. Meingast, H. v. Löhneysen, H. Ikeda, and K. Ishizaka
Phys. Rev. B 90, 121111R[1-5] (2014).

210. Strongly three-dimensional electronic structure and Fermi surfaces of SrFe2(As0.65P0.35)2:Comparison with BaFe2(As1-xPx)2
H. Suzuki, T. Kobayashi, S. Miyasaka, T. Yoshida, K. Okazaki, L. C. C. Ambolode, II, S. Ideta, M. Yi, M. Hashimoto, D. H. Lu, Z.-X. Shen, K. Ono, H. Kumigashira, S. Tajima, and A. Fujimori
Phys. Rev. B 89, 184513[1-6] (2014).

209. Anisotropy of the superconducting gap in the iron-based superconductor BaFe2(As1-xPx)2
T. Yoshida, S. Ideta, T. Shimojima, W. Malaeb, K. Shinada, H. Suzuki, I. Nishi, A. Fujimori, K. Ishizaka, S. Shin, Y. Nakashima, H. Anzai, M. Arita, A. Ino, H. Namatame, M. Taniguchi, H. Kumigashira, K. Ono, S. Kasahara, T. Shibauchi, T. Terashima, Y. Matsuda, M. Nakajima, S. Uchida, Y. Tomioka, T. Ito, K. Kihou, C. H. Lee, A. Iyo, H. Eisaki, H. Ikeda, R. Arita, T. Saito, S. Onari, and H. Kontani
Scientific Reports 4, 7292[1-6] (2014).

208. Te 5p orbitals bring three-dimensional electronic structure to two-dimensional Ir0.95Pt0.05Te2
D. Ootsuki, S. Pyon, T. Toriyama, K. Kudo, M. Nohara, K. Horiba, M. Kobayashi, K. Ono, H. Kumigashira, T. Noda, T. Sugimoto, A. Fujimori, N. L. Saini, T. Konishi, Y. Ohta, and T. Mizokawa
Phys. Rev. B 89, 104506[1-4] (2014).

207. Coexistence of Bloch electrons and glassy electrons in Ca10(Ir4As8)(Fe2−xIrxAs2)5 revealed by angle-resolved photoemission spectroscopy
K. Sawada, D. Ootsuki, K. Kudo, D. Mitsuoka, M. Nohara, T. Noda, K. Horiba, M. Kobayashi, K. Ono, H. Kumigashira, N. L. Saini, and T. Mizokawa
Phys. Rev. B 89, 220508R[1-4] (2014).

206. Microscopically-Tuned Band Structure of Epitaxial Graphene through Interface and Stacking Variations Using Si Substrate Microfabrication
H. Fukidome, T. Ide, Y. Kawai, T. Shinohara, N. Nagamura, K. Horiba, M. Kotsugi, T. Ohkochi, T. Kinoshita, H. Kumigashira, M. Oshima, and M. Suemitsu
Scientific Reports 4, 5173[1-6] (2014).

205. Structural and transport properties of Ti1-xFexO2-d thin film prepared by RF magnetron sputtering
K. Usui, T. Okumura, E. Sakai, H. Kumigashira, and T. Higuchi
J. Phys.: Conf. Ser. 502, 012001[1-4] (2014).

204. Electronic structure of Li2Fe1-xMnxP2O7 for lithium-ion battery studied by resonant photoemission spectroscopy
K. Horiba, S. Ito, S. Kurosumi, N. Nagamura, S. Toyoda, H. Kumigashira, M. Oshima, N. Furuta, S. Nishimura, A. Yamada and N. Mizuno
J. Phys.: Conf. Ser. 502, 012004[1-4] (2014).


2013年度

203. Gradual localization of Ni 3d states in LaNiO3 ultrathin films induced by dimensional crossover
E. Sakai, M. Tamamitsu, K. Yoshimatsu, S. Okamoto, K. Horiba, M. Oshima, and H. Kumigashira
Phys. Rev. B 87, 075132[1-8] (2013).

202. Determination of the surface and interface phase shifts in metallic quantum well structures of perovskite oxides
K. Yoshimatsu, E. Sakai, M. Kobayashi, K. Horiba, T. Yoshida, A. Fujimori, M. Oshima, and H. Kumigashira
Phys. Rev. B 88, 115308[1-5] (2013).

201. Chemical-state-resolved depth profiles of Al/Pr0.7Ca0.3MnO3 stacked structures for application in resistive switching devices
S. Toyoda, T. Namiki, E. Sakai, K. Nakata, M. Oshima, and H. Kumigashira
J. Appl. Phys. 114, 243711[1-5] (2013).

200. Epitaxial synthesis and electronic properties of double-perovskite Sr2TiRuO6 films
K. Nogami, K. Yoshimatsu, H. Mashiko, E. Sakai, H. Kumigashira, O. Sakata, T. Oshima, and A. Ohtomo
Appl. Phys. Exp. 6, 105502[1-4] (2013).

199. Spectroscopic studies on the electronic and magnetic states of Co-doped perovskite manganite Pr0.8Ca0.2Mn1−yCoyO3 thin films
K. Yoshimatsu, H. Wadati, E. Sakai, T. Harada, Y. Takahashi, T. Harano, G. Shibata, K. Ishigami, T. Kadono, T. Koide, T. Sugiyama, E. Ikenaga, H. Kumigashira, M. Lippmaa, M. Oshima, and A. Fujimori
Phys. Rev. B 88, 174423[1-6] (2013).

198. Observation of rebirth of metallic paths during resistance switching of metal nanowire
K. Horiba, K. Fujiwara, N. Nagamura, S. Toyoda, H. Kumigashira, M. Oshima, and H. Takagi
Appl. Phys. Lett. 103, 193114[1-3] (2013).

197. Resonant Photoemission Spectroscopy of the Cathode Material LixMn0.5Fe0.5PO4 for Lithium-Ion Battery
S. Kurosumi, K. Horiba, N. Nagamura, S. Toyoda, H. Kumigashira, M. Oshima, S. Furutsuki, S. Nishimura, A. Yamada, and N. Mizuno
J. Power Source 226, 42-46 (2013).

196. Electronic and transport properties of Eu-substituted SrFeO2 thin films with infinite-layer structure
A. Chikamatsu, T. Matsuyama, T. Katayama, Y. Hirose, H. Kumigashira, M. Oshima, T. Fukukmura, and T. Hasegawa
J. Cry. Growth 378, 165-167 (2013).

195. Strongly Spin-Orbit Coupled Two-Dimensional Electron Gas Emerging near the Surface of Polar Semiconductors
M. Sakano, M. S. Bahramy, A. Katayama, T. Shimojima, H. Murakawa, Y. Kaneko, W. Malaeb, S. Shin, K. Ono, H. Kumigashira, R. Arita, N. Nagaosa, H. Y. Hwang, Y. Tokura, and K. Ishizaka
Phys. Rev. Lett. 110, 107204[1-5] (2013).

194. Electronic structure of hole-doped delafossite oxides CuCr1-xMgxO2
T. Yokobori, M. Okawa, K. Konishi, R. Takei, K. Katayama, S. Oozono, T. Shinmura, T. Okuda, H. Wadati, E. Sakai, K. Ono, H. Kumigashira, M. Oshima, T. Sugiyama, E. Ikenaga, N. Hamada, and T. Saitoh
Phys. Rev. B 87, 195124[1-8] (2013).
arXiv:1211.1829

193. Collapsed tetragonal phase transition of Ca(Fe1-xRhx)2As2 studied with photoemission spectroscopy
K. Tsubota, T. Wakita, H. Nagao, C. Hiramatsu, T. Ishiga, M. Sunagawa, K. Ono, H. Kumigashira, M. Danura, K. Kudo, M. Nohara, Y. Muraoka, and T. Yokoya
J. Phys. Soc. Jap. 82, 073705[1-5] (2013).

192. Effects of Zn substitution on the electronic structure of BaFe2As2 revealed by angle-resolved photoemission spectroscopy
S. Ideta, T. Yoshida, M. Nakajima, W. Malaeb, T. Shimojima, K. Ishizaka, A. Fujimori, H. Kimigashira, K. Ono, K. Kihou, Y. Tomioka, C. H. Lee, A. Iyo, H. Eisaki, T. Ito, and S. Uchida
Phys. Rev. B 87, 201110R[1-5] (2013).

191. Absence of Superconductivity in the “hole-doped” Fe pnictide Ba(Fe1-xMnx)2As2: Photoemission and X-ray Absorption Spectroscopy Studies
H. Suzuki, T. Yoshida, S. Ideta, G. Shibata, K. Ishigami, T. Kadono, A. Fujimori, M. Hashimoto, D. H. Lu, Z.-X. Shen, K. Ono, E. Sakai, H. Kumigashira, M. Matsuo, and T. Sasagawa
Phys. Rev. B 88, 100501R[1-5] (2013).

2012年度

190. Depth profiling the potential in perovskite oxide heterojunctions using photoemission spectroscopy
M. Minohara, K. Horiba, H. Kumigashira, E. Ikenaga, and M. Oshima
Phys. Rev. B 85, 165108[1-6] (2012).

189. Self-Energy on the Low- to High-Energy Electronic Structure of Correlated Metal SrVO3
S. Aizaki, T. Yoshida, K. Yoshimatsu, M. Takizawa, M. Minohara, S. Ideta, A. Fujimori, K. Gupta, P. Mahadevan, K. Horiba, H. Kumigashira, and M. Oshima
Phys. Rev. Lett. 109, 056401[1-5] (2012).

188. Core level and valence band spectroscopy of SrRuO3: electron correlation vs. covalence effects
E.B. Guedes, M. Abbate, K. Ishigami, A. Fujimori, K. Yoshimatsu, H. Kumigashira, M. Oshima, F.C. Vicentin, P.T. Fonseca, and R.J.O. Mossanek
Phys. Rev. B 86, 235127[1-8] (2012).

187. Epitaxially Stabilized EuMoO3: A New Itinerant Ferromagnet
Y. Kozuka, H. Seki, T. C. Fujita, S. Chakraverty, K. Yoshimatsu, H. Kumigashira, M. Oshima, M. S. Bahramy, R. Arita, and M. Kawasaki
Chem. Mater. 24, 3746-3750 (2012).
arXiv 1209.2032.

186. Investigation of electronic states of infinite-layer SrFeO2 epitaxial thin films by x-ray photoemission and absorption spectroscopies
A. Chikamatsu, T. Matsuyama, Y. Hirose, H. Kumigashira, M. Oshima, and T. Hasegawa
J. Electron Spectr. Rel. Phenom. 184, 547-550 (2012).

185. Electronic Structure of SrTi0.99Sc0.01O3 Thin Film by High-Resolution Soft-X-ray Spectroscopy
T. Okumura, T. Inoue, Y. Tasaki, E. Sakai, H. Kumigashira, and T. Higuchi
J. Phys. Soc. Jpn. 81, 094705[1-4] (2012).

184. Determining factor of effective work function in metal/bi-layer high-k gate stack structure studied by photoemission spectroscopy
S. Toyoda, H. Kumigashira, M. Oshima, H. Sugaya, and H. Morita
Appl. Phys. Lett. 100, 112906[1-3] (2012).

183. Significant increase in conduction band discontinuity due to solid phase epitaxy of Al2O3 gate insulator films on GaN semiconductor
S. Toyoda, T. Shinohara, H. Kumigashira, M. Oshima, and Y. Kato
Appl. Phys. Lett. 101, 231607[1-4] (2012).

182. Te concentration dependent photoemission and inverse-photoemission study of FeSe1-xTex
T. Yokoya, R. Yoshida, Y. Utsumi, K. Tsubota, H. Okazaki, T. Wakita, Y. Mizuguchi, Y. Takano, T. Muro, Y. Kato, H. Kumigashira, M. Oshima, H. Harima, Y. Aiura, H. Sato, A. Ino, H. Namatame, M. Taniguchi, M. Hirai, and Y. Muraoka
Sci. Technol. Adv. Mater. 13, 054403[1-8] (2012).

2011年度

181. Metallic Quantum Well States in Artificial Structures of Strongly Correlated Oxide
K. Yoshimatsu, K. Horiba, H. Kumigashira, T. Yoshida, A. Fujimori, and M. Oshima
Science 333, 319-322 (2011).

180. Formation of transition layers at metal/perovskite oxide interfaces showing resistive switching behaviors
T. Yamamoto, R. Yasuhara, I. Ohkubo, H. Kumigashira, and M. Oshima
J. Appl. Phys. 110, 053707[1-7] (2011).

179. Competition between instabilities of Peierls transition and Mott transition in W-doped VO2 thin films
E. Sakai, K. Yoshimatsu, K. Shibuya, H. Kumigashira, E. Ikenaga, M. Kawasaki, Y. Tokura, and M. Oshima
Phys. Rev. B 84, 195132[1-5] (2011).

178. Magnetic and electronic properties of La2VMnO6 ordered double perovskite thin films
S. Chakraverty, K. Yoshimatsu, Y. Kozuka, H. Kumigashira, M. Oshima, T. Makino, A. Ohtomo, and M. Kawasaki
Phys. Rev. B 84, 132411[1-4] (2011).

177. An n-type Transparent Conducting Oxide: Nb12O29
T. Ohsawa, J. Okubo, T. Suzuki, H. Kumigashira, M. Oshima, and T. Hitosugi
J. Phys. Chem. C 115, 16625-16629 (2011).

176. Carrier compensation mechanism in heavily Nb-doped anatase Ti1-xNbxO2+δ epitaxial thin films
H. Nogawa, A. Chikamatsu, Y. Hirose, S. Nakao, H. Kumigashira, M. Oshima, and T. Hasegawa
J. Phys. D: Appl. Phys. 44, 365404 [6] (2011).

175. Electron beam irradiation-induced reduction of Sn on epitaxial rutile SnxTi1-xO2 alloy thin films
Y. Komuro, H. Kumigashira, M. Oshima, Y. Matsumoto
Thin Solid Films 519, 2555–2558 (2011).

174. Scanning photoelectron microscope for nanoscale three-dimensional spatial-resolved electron spectroscopy for chemical analysis
K. Horiba, Y. Nakamura, N. Nagamura, S. Toyoda, H. Kumigashira, M. Oshima, K. Amemiya, Y. Senba, and H. Ohashi
Rev. Sci. Instrum. 82, 113701 [1-6] (2011).

173. Resonant Photoemission Spectroscopy of the Cathode Material LixFePO4 for Lithium Ion Battery
S. Kurosumi, N. Nagamura, S. Toyoda, Koji Horiba, Hiroshi Kumigashira, M. Oshima, S. Furutsuki, S. Nishimura, A. Yamada, and N. Mizuno
J. Phys. Chem. C 115, 25519-25522 (2011).

172. Band offsets of polar and nonpolar GaN/ZnO heterostructures determined by synchrotron radiation photoemission spectroscopy
J. W. Liu, A. Kobayashi, S. Toyoda, H. Kamada, A. Kikuchi, J. Ohta, H. Fujioka, H. Kumigashira, and M. Oshima
Phys. Status Solidi B 248, 956-959 (2011).

171. Chemical-state resolved depth profile and band discontinuity in TiN/HfSiON gate stack structure with AlOx cap layer
S. Toyoda, H. Kamada, H. Kumigashira, and M. Oshima
J. Appl. Phys. 110, 104107[1-4] (2011).

170. Nano-Scale Characterization of Poly-Si Gate on High-k Gate Stack Structures by Scanning Photoemission Microscopy
S. Toyoda, Y. Nakamura, K. Horiba, H. Kumigashira, M. Oshima, and K. Amemiya
e-J. Surf. Sci. Nanotech. 9, 224-227 (2011).

169. Synchrotron Radiation Nano-spectroscopy of Dielectrics for LSI and ReRAM
M. Oshima, S. Toyoda, K. Horiba, R. Yasuhara and H. Kumigashira
ECS Trans. 41, 453-460 (2011).
[ElectroChemical Society Transaction Boston, 41(3), 453-460 (2011).]


2010年度

168. Dimensional-Crossover-Driven Metal-Insulator Transition in SrVO3 Ultrathin Films
K. Yoshimatsu, T. Okabe, H. Kumigashira, S. Okamato, S. Aizaki, A. Fujimori, and M. Oshima
Phys. Rev. Lett. 104, 147601[1-4] (2010).

167. Termination layer dependence of Schottky barrier height for La0.6Sr0.4MnO3/Nb:SrTiO3 heterojunctions
M. Minohara, R. Yasuhara, H. Kumigashira, and M. Oshima
Phys. Rev. B 81, 235322[1-6] (2010).

166. Interfacial chemical states of resistance-switching metal/Pr0.7Ca0.3MnO3 interfaces
R. Yasuhara, T. Yamamoto, I. Ohkubo, H. Kumigashira, and M. Oshima
Appl. Phys. Lett. 97, 132111[1-3] (2010).

165. Transport properties and electronic states of anatase Ti1-xWxO2 epitaxial thin films
U. Takeuchi, A. Chikamatsu, T. Hitosugi, H. Kumigashira, M. Oshima, Y. Hirose, T. Shimada, and T. Hasegawa
J. Appl. Phys. 107, 023705[1-4] (2010).

164. Carrier compensation by excess oxygen atoms in anatase Ti0.94Nb0.06O2+δ epitaxial thin films
H. Nogawa, T. Hitosugi, A. Chikamatsu, S. Nakao, Y. Hirose, T. Shimada, H. Kumigashira, M. Oshima, and T. Hasegawa
Jpn. J. Appl. Phys. 49, 041102[1-4] (2010).

163. Molecular Beam Deposition of Nanoscale Ionic Liquids in Ultrahigh Vacuum
S. Maruyama, Y. Takeyama, H. Taniguchi, H. Fukumoto, M. Itoh, H. Kumigashira, M. Oshima, T. Yamamoto, and Y. Matsumoto
ACS Nano 4, 5946-5952 (2010).

162. Chemical trend of Fermi-level shift in transition metal-doped TiO2 films
Y. Matsumoto, M. Katayama, T. Abe, T. Ohsawa, I. Ohkubo, H. Kumigashira, M. Oshima and H. Koinuma
J. Ceram. Soc. Jpn. 118, 993-996 (2010).

161. Electronic structure of the Novel Filled Skutterudite PrPt4Ge12 Superconductor
Y. Nakamura, H. Okazaki, R. Yoshida, T. Wakita, M. Hirai, Y. Muraoka, H. Takeya, K. Hirata, H. Kumigashira, M. Oshima, and T. Yokoya
J. Phys. Soc. Jpn. 79, 124701[1-4] (2010).

160. Annealing effects of in-depth profile and band discontinuity in TiN/LaO/HfSiO/SiO2/Si gate stack structure studied by angle-resolved photoemission spectroscopy from backside
S. Toyoda, H. Kamada, T. Tanimura, H. Kumigashira, M. Oshima, T. Ohtsuka, Y. Hata, and M. Niwa
Appl. Phys. Lett. 96, 042905[1-3] (2010).

159. Photoinduced charge-trapping phenomena in metal/high-k gate stack structures studied by synchrotron radiation photoemission spectroscopy
T. Tanimura, S. Toyoda, H. Kamada, H. Kumigashira, M. Oshima, T. Sukegawa, G. L. Liu, and Z. Liu
Appl. Phys. Lett. 96, 162902[1-3] (2010).

158. Effect of nitrogen bonding states on dipole at the HfSiO/SiON interface studied by photoemission spectroscopy
S. Toyoda, H. Kamada, A. Kikuchi, H. Kumigashira, M. Oshima, K. Iwamoto, T. Sukegawa, and Z. Liu
J. Appl. Phys. 107, 124103[1-3] (2010).

157. Interfacial reactions in Ru metal-electrode/HfSiON gate stack structures studied by synchrotron-radiation photoemission spectroscopy
H. Kamada, S. Toyoda, T. Tanimura, H. Kumigashira, M. Oshima, G. L. Liu, and Z. Liu, and T. Sukegawa
J. Appl. Phys. 108, 123521[1-4] (2010).

156. Thermal stability of TiN/HfSiON gate stack structures studied by synchrotron-radiation photoemission spectroscopy
S. Toyoda, H. Kamada, H. Kumigashira, M. Oshima, K. Iwamoto, T. Sukegawa, and Z. Liu
Appl. Phys. Lett. 97, 262903[1-3] (2010)

155. Electronic structures of c-plane and a-plane AlN/ZnO heterointerfaces determined by synchrotron radiation photoemission spectroscopy
J. W. Liu, A. Kobayashi, K. Ueno, S. Toyoda, A. Kikuchi, J. Ohta, H. Fujioka, H. Kumigashira, and M. Oshima
Appl. Phys. Lett. 97, 252111[1-3] (2010).

154. Synchrotron Radiation Photoelectron Spectroscopy of Metal Gate /HfSiO(N) /SiO(N) /Si Stack Structures
M. Oshima, S. Toyota, H. Kamada, T. Tanimura, Y. Nakamura, K. Horiba, and H. Kumigashira
ECS Trans. 33, 231-240 (2010).
[ElectroChemical Society Transaction (ECST) 33, 231-240 (2010).]

2009年度

153. Thickness dependent electronic structure of La0.6Sr0.4MnO3 layer in SrTiO3/ La0.6Sr0.4MnO3 / SrTiO3 heterostructures studied by hard x-ray photoemission spectroscopy
K. Yoshimatsu, K. Horiba, H. Kumigashira, E. Ikenaga, and M. Oshima
Appl. Phys. Lett. 94, 071901[1-3] (2009)

152. Orientation dependence of the Schottky barrier height for La0.6Sr0.4MnO3/SrTiO3 heterojunctions
M. Minohara, Y. Furukawa, R. Yasuhara, H. Kumigashira, and M. Oshima
Appl. Phys. Lett. 94, 242106 [1-3] (2009).

151. Inhomogeneous chemical states in resistance-switching devices with a planar-type Pt/CuO/Pt structure
R. Yasuhara, K. Fujiwara, K. Horiba, H. Kumigashira, M. Kotsugi, M. Oshima, and H. Takagi
Appl. Phys. Lett. 95, 012110[1-3] (2009).

150. Yoshimatsu et al. Reply
K. Yoshimatsu, R. Yasuhara, H. Kumigashira, and M. Oshima
Phys. Rev. Lett. 102, 199704[1] (2009).
Selected for the May 25, 2009 issue of Virtual Journal of Nanoscale Science & Technology

149. Angle-resolved photoemission study of Nb-doped SrTiO3
M. Takizawa, K. Maekawa, H. Wadati, T. Yoshida, and A. Fujimori, H. Kumigashira, and M. Oshima
Phys. Rev. B 79, 113103[1-4] (2009).

148. In-situ photoemission study of Nd1-xSrxMnO3 epitaxial thin films
H. Wadati, A. Chikamatsu, H. Kumigashira, A. Fujimori, M. Oshima, M. Lippmaa, M. Kawasaki, and H. Koinuma
Phys. Rev. B 79, 153106 [1-4] (2009).

147. Electronic structure characterization of La2NiMnO6 epitaxial thin films using synchrotron-radiation photoelectron spectroscopy and optical spectroscopy
M. Kitamura, I. Ohkubo, M. Matsunami, K. Horiba, H. Kumigashira, Y. Matsumoto, H. Koinuma, and M. Oshima
Appl. Phys. Lett. 94, 262503[1-3] (2009).

146. Systematic Analysis of ARPES Spectra of Transition-Metal Oxides: Nature of Effective d Band
H. Wadati, A. Chikamatsu, M. Takizawa, H. Kumigashira, T. Yoshida,T. Mizokawa, A. Fujimori, M. Oshima, and N. Hamada
J. Phys. Soc. Jpn. 78, 094709[1-4] (2009).

145. Pressure-induced change in the electronic structure of epitaxially strained La1-xSrxMnO3 thin films
K. Horiba, A. Maniwa, A. Chikamatsu, K. Yoshimatsu, H. Kumigashira, H. Wadati, A. Fujimori, D. Nomoto, S. Ueda, H. Yoshikawa, E. Ikenaga, J. J. Kim, K. Kobayashi, and M. Oshima
Phys. Rev. B 80, 132406[1-4] (2009).

144. Madelung potentials and covalency effect in strained La1-xSrxMnO3 thin films studied by core-level photoemission spectroscopy
H. Wadati, A. Maniwa, A. Chikamatsu, H. Kumigashira, M. Oshima, T. Mizokawa, A. Fujimori, and G. A. Sawatzky
Phys. Rev. B 80, 125107[1-4] (2009).

143. Chemical stability and transport properties of ultrathin La1.2Sr1.8Mn2O7 Ruddlesden-Popper films
M. Matvejeff, K. Yoshimatsu, H. Kumigashira, M. Oshima, and M. Lippmaa
Appl. Phys. Lett. 95, 152110[1-3] (2009).

142. Coherent and incoherent d band dispersions in SrVO3
M. Takizawa, M. Minohara, H. Kumigashira, D. Toyota, M. Oshima, H. Wadati, T. Yoshida, A. Fujimori, M. Lippmaa, M. Kawasaki, H. Koinuma, G. Sordi, and M. Rozenberg
Phys. Rev. B 80, 235104[1-4] (2009).

141. Effects of thermal annealing on charge density and N chemical states in HfSiON films
T. Tanimura, H. Kamada, S. Toyoda, H. Kumigashira, M. Oshima, G. L. Liu, Z. Liu, and K. Ikeda
Appl. Phys. Lett. 94, 082903[1-3] (2009).

140. Relationship between band alignment and chemical states upon annealing in HfSiON/SiON stacked films on Si substrates
T. Tanimura, S. Toyoda, H. Kamada, H. Kumigashira, M. Oshima, G. L. Liu, Z. Liu, and K. Ikeda
Appl. Phys. Lett. 95, 183113[1-3] (2009).

139. Study on mechanism of crystallization in HfO2 films on Si substrates by in-depth profile analysis using photoemission spectroscopy
S. Toyoda, H. Takahashi, H. Kumigashira, M. Oshima, D.-I. Lee, S. Sun, Z. Liu, Y. Sun, P. A. Pianetta, I. Oshiyama, K. Tai, and S. Fukuda
J. Appl. Phys. 106, 064103[1-4] (2009).

138. Mechanism of Carrier Mobility Degradation Induced by Crystallization of HfO2 Gate Dielectrics
T. Ando, T. Shimura, H. Watanabe, T. Hirano, S. Yoshida, K. Tai, S. Yamaguchi, H. Iwamoto, S. Kadomura, S. Toyoda, H. Kumigashira, and M. Oshima
Appl. Phys. Exp. 2, 071402[1-3] (2009).

137. In-depth profile of gate-insulator films on Si substrates studied by angle-resolved photoelectron spectroscopy using synchrotron radiation
S. Toyoda, H. Kumigashira, M. Oshima, G. L. Liu, Z. Liu, and K. Ikeda
J. Surf. Anal. 15, 299-302 (2009).

2008年度

136. In-situ Photoemission Study of Pr1-xCaxMnO3 Epitaxial Thin Films with Suppressed Charge Fluctuations
H. Wadati, A. Maniwa, A. Chikamatsu, I. Ohkubo, H. Kumigashira, M. Oshima, A. Fujimori, M. Lippmaa, M. Kawasaki, and H. Koinuma
Phys. Rev. Lett. 100, 026402 [1-4] (2008).

135. Origin of metallic states at heterointerface between band insulators LaAlO3 and SrTiO3
K. Yoshimatsu, R. Yasuhara, H. Kumigashira, and M. Oshima
Phys. Rev. Lett. 101, 026802[1-4] (2008).
Selected for the July 21, 2008 issue of Virtual Journal of Nanoscale Science & Technology Selected for the Highlight of Nature publishing group; http://www.natureasia.com/asia-materials/highlight.php?id=271

134. Interfacial electronic structure of SrTiO3/SrRuO3 heterojuctions studied by in situ photoemission spectroscopy
H. Kumigashira, M. Minohara, M. Takizawa, A. Fujimori, D. Toyota, I. Ohkubo, M. Oshima, M. Lippmaa, and M. Kawasaki
Appl. Phys. Lett. 92, 122105[1-3] (2008).

133. Trap-controlled space-charge-limited current mechanism in resistance switching at metal/manganese oxide interface
T. Harada, I. Ohkubo, K. Tsubouchi, H. Kumigashira, T. Ohnishi, M. Lippmaa, Y. Matsumoto, H. Koinuma, and M. Oshima
Appl. Phys. Lett. 92, 222113 [1-3] (2008).

132. Epitaxial growth and surface metallic nature of LaNiO3 thin films
K. Tsubouchi, I. Ohkubo, H. Kumigashira, Y. Matsumoto, T. Ohnishi, M. Lippmaa, H. Koinuma, and M. Oshima
Appl. Phys. Lett. 92, 262109[1-3] (2008).

131. Electronic band structure of transparent conductor: Nb-doped anatase TiO2
T. Hitosugi, H. Kamisaka, K. Yamashita, H. Nogawa, Y. Furubayashi, S. Nakao, N. Yamada, A. Chikamatsu, H. Kumigashira, M. Oshima, Y. Hirose, T. Shimada, and T. Hasegawa
Appl. Phys. Express 1, 111203[1-3] (2008).

130. Highly Reliable TaOX ReRAM and Direct Evidence of Redox Reaction Mechanism
Z. Wei, Y. Kanzawa, K. Arita, Y. Katoh, K. Kawai, S. Muraoka, S. Mitani, S. Fujii, K.Katayama, M. Iijima, T. Mikawa, T. Ninomiya, R. Miyanaga, Y. Kawashima, K. Tsuji, A. Himeno, T. Okada, R. Azuma1, K. Shimakawa, H. Sugaya1, T. Takagi, R. Yasuhara, K.Horiba, H. Kumigashira, and M. Oshima
Tech. Dig. - Int. Electron Devices Meet (IEEE) 2008, 293-296 (2008).

129. Field-induced resistance switching at metal / perovskite manganese oxide interface
I. Ohkubo, K. Tsubouchi, T. Harada, H. Kumigashira, K. Itaka, Y. Matsumoto, T. Ohnishi, M. Lippmaa, H. Koinuma, and M. Oshima
Mater. Sci. Eng. B 148, 13-15 (2008).

128. Electrode dependence and film resistivity effect in the electric-field induced resistance-switching phenomena in epitaxial NiO films
T. Ishihara, I. Ohkubo, K. Tsubouchi, H. Kumigashira, U. S. Joshi, Y. Matsumoto, H. Koinuma, and M. Oshima
Mater. Sci. Eng. B 148, 40-42 (2008).

127. Modification of reflection high energy electron diffraction system for in-situ monitoring of oxide epitaxy at high oxygen pressure
K. Tsubouchi, I. Ohkubo, T. Harada, H. Kumigashira, Y. Matsumoto, T. Ohnishi, M. Lippmaa, H. Koinuma, and M. Oshima
Mater. Sci. Eng. B 148, 16-18 (2008).

126. Depth profiling of chemical states and charge density in HfSiON by photoemission spectroscopy using synchrotron radiation
T. Tanimura, S. Toyoda, H. Kumigashira, and M. Oshima, K. Ikeda, G. L. Liu, and Z. Liu
Appl. Phys. Lett. 92, 082903 [1-3] (2008).

125. Thermal stability in a-Si/HfSiO(N)/Si gate stack structures studied by photoemission spectroscopy using synchrotron radiatio
S. Toyoda, H Kamada, T Tanimura, H. Kumigashira, M. Oshima, G. L. Liu, Z. Liu, and K. Ikeda
Appl. Phys. Lett. 93, 182906 [1-3] (2008).

124. Control of oxidation and reduction reactions at HfSiO/Si interfaces through N exposure or incorporation
H. Kamada, T. Tanimura, S. Toyoda, H. Kumigashira, M. Oshima, G. L. Liu, Z. Liu, and K. Ikeda
Appl. Phys. Lett. 93, 212903 [1-3] (2008).

123. Application of SPELEEM to high-k gate dielectrics: relationship between surface morphology and photoelectron spectra during Hf-silicide formation
R. Yasuhara, T. Taniuchi, H. Kumigashira, M. Oshima, F.Z. Guo, K. Ono, T. Kinoshita, K. Ikeda, G.-L. Liu, Z. Liu, and K. Usuda
Appl. Surf. Sci. 254, 4757-4761 (2008).

122. Analysis of x-ray irradiation effect in high-k gate dielectrics by time-dependent photoemission spectroscopy using synchrotron radiation
T. Tanimura, S. Toyoda, H. Kumigashira, M. Oshima, K. Ikeda, G.L. Liu, Z. Liu and K. Usuda
Surf. Interface Anal. 40, 1606-1609 (2008).

2007年度

121. Band diagrams of spin tunneling junctions La0.6Sr0.4MnO3 / Nb:SrTiO3 and SrRuO3 / Nb:SrTiO3 determined by in-situ photoemission spectroscopy
M. Minohara, I. Ohkubo, H. Kumigashira, and M. Oshima
Appl. Phys. Lett. 90, 132123[1-3] (2007).
Selected for the April 16, 2007 issue of Virtual Journal of Nanoscale Science & Technology

120. High–throughput characterization of metal electrode performance for electric–field–induced resistance switching in metal–Pr0.7Ca0.3MnO3–metal structures
K. Tsubouchi, I. Ohkubo, H. Kumigashira, M. Oshima, Y. Matsumoto, K. Itaka, and H. Koinuma
Adv. Matter. 19, 1711-1713 (2007).

119. Gradual Disappearance of the Fermi Surface near the Metal-Insulator Transition in La1-xSrxMnO3 Thin Films
A. Chikamatsu, H. Wadati, H. Kumigashira, M. Oshima, A. Fujimori, M. Lippmaa, K. Ono, M. Kawasaki, and H. Koinuma
Phys. Rev. B 76, 201103(R) [1-4] (2007).

118. Magnetic domain structure of technically patterned ferromagnet La1-xSrxMnO3 thin film
M. Kubota, T. Taniuchi, K. Yasuhara, H. Kumigashira, K. Ono, M. Oshima, H. Okazaki, T. Wakita, N. Yokoya, H. Akinaga, M. Lippmaa, M. Kawasaki, and H. Koinuma
Appl. Phys. Lett. 91, 182503 [1-3] (2007).

117. Photoemission study of TiO2/VO2 interfaces
K. Maekawa, M. Takizawa, H. Wadati, T. Yoshida, A. Fujimori, H. Kumigashira, M. Oshima, Y. Muraoka, Y. Nagao, and Z. Hiroi
Phys. Rev. B 76, 115121[1-5] (2007).

116. Temperature-dependent photoemission and x-ray absorption studies of the metal-insulator transition in Bi1-xLaxNiO3
H. Wadati, K. Tanaka, A. Fujimori, T. Mizokawa, H. Kumigashira, M. Oshima, S. Ishiwata, M. Azuma, and M. Takano
Phys. Rev. B 76, 205123 [1-4] (2007).

115. In-situ angle-resolved photoemission study on half-metallic La0.6Sr0.4MnO3 thin films
A. Chikamatsu, H.Wadati, H. Kumigashira, M. Oshima, A. Fujimori, N. Hamada, T. Ohnishi, M. Lippmaa, K. Ono, M. Kawasaki, and H. Koinuma
J. Magn. Magn. Mater. 310, 1030-1032 (2007).

114. In-situ photoemission study of Pr1-xCaxMnO3 epitaxial thin films
H. Wadati, A. Maniwa, I. Ohkubo, H. Kumigashira, A. Fujimori, M. Oshima, M. Lippmaa, M. Kawasaki, and H. Koinuma
J. Magn. Magn. Mater. 310, 963-965 (2007).

113. Transport and magnetic properties of Pr1-xCaxMnO3 epitaxial films grown on LaAlO3 substrates
A. Maniwa, K. Okano, I. Ohkubo, H. Kumigashira, M. Oshima, M. Lippmaa, M. Kawasaki, and H. Koinuma
J. Magn. Magn. Mater. 310, 2237-2238 (2007).

112. In-situ photoemission characterization of the tunneling barrier in La0.6Sr0.4MnO3/SrTiO3/La0.6Sr0.4MnO3 tunneling junctions
H. Kumigashira, R. Hashimoto, A. Chikamatsu, M. Oshima, H. Wadati, A. Fujimori, M. Lippmaa, M. Kawasaki, and H. Koinuma
J. Magn. Magn. Mater. 310, 1997-1999 (2007).

111. Temperature-dependence of the electronic structure of La1-xSrxMnO3 thin films studied by in situ photoemission spectroscopy
K. Horiba, A. Chikamatsu, H. Kumigashira, M. Oshima, H. Wadati, A. Fujimori, M. Lippmaa, M. Kawasaki, and H. Koinuma
J. Electron Spectr. Rel. Phenom. 156-158, 375-378 (2007).

110. Thickness Dependence of Magnetic Domain Formation in La0.6Sr0.4MnO3 Epitaxial Thin Films Studied by XMCD-PEEM
T. Taniuchi, R. Yasuhara, H. Kumigashira, M. Kubota, H. Okazaki, T. Wakita, T. Yokoya, K. Ono, M. Oshima, M. Lippmaa, M. Kawasaki, and H. Koinuma
Surf. Sci. 601, 4690-4693 (2007).

109. Photoemission Study of Perovskite-Type Manganites with Stripe Ordering
K. Ebata, H. Wadati, M. Takizawa, K. Maekawa, A. Fujimori, A. Chikamatsu, H. Kumigashira, M. Oshima, Y. Tomioka, H. Kuwahara, and Y. Tokura
J. Supercond. Nov. Magn. 20, 543-546 (2007).

108. Combinatorial in situ growth-and-analysis with synchrotron radiation of thin films for oxide electronics
M. Oshima, H. Kumigashira, T. Ohnishi, M. Lippmaa, M. Kawasaki, and H.Koinuma
AIP Conf. Proc. 879, 1667 (2007).

107. Suppression of silicidation and crystallization by atmosphere controlled annealing for poly-crystalline silicon/HfO2/SiO2/Si gate stack structures
H. Takahashi, S. Toyoda, J. Okabayashi, H. Kumigashira, M. Oshima, K. Ikeda, Guo Lin Liu, Z. Liu, and K. Usuda
Appl. Phys. Lett. 91, 012902 [1-3] (2007).

106. Annealing-induced interfacial reactions between gate electrodes and HfO2/Si gate stack studied by synchrotron radiation photoemission and x-ray absorption spectroscopy
H. Takahashi, J. Okabayashi, S. Toyoda, H. Kumigashira, M. Oshima, K. Ikeda, Guo Lin Liu, Z. Liu and K. Usuda
AIP Conf. Proc. 879, 1569 (2007).

2006年度

105. Interfacial reaction in ZrO2/Si gate-stack structure probed by photoemission spectroscopy combined with combinatorial annealing system
J. Okabayashi, S. Toyoda, H. Takahashi, H. Kumigashira, M. Oshima, K. Ikeda, G.L. Liu, Z. Liu and K. Usuda
e-J. Surf. Sci. Nanotech 4, 263-266 (2006).

104. Band offsets and chemical bonding states in N-plasma-treated HfSiON gate stacks studied by photoelectron spectroscopy and x-ray absorption spectroscopy
M. Oshima, H. Takahashi, J. Okabayashi, S. Toyoda, H. Kumigashira, M. Inoue, M. Mizutani, and J. Yugami
J. Appl. Phys. 100, 033709[1-5] (2006).

103. Mechanism of Hf-silicide formation at interface between poly-Si electrode and HfO2/Si gate stacks studied by photoemission and x-ray absorption spectroscopy
H. Takahashi, J. Okabayashi, S. Toyoda, H. Kumigashira, M. Oshima, K. Ikeda, G. L. Liu, Z. Liu, and K. Usuda
J. Appl. Phys. 99, 113710[1-6] (2006).

102. Annealing-temperature dependence: Mechanism of Hf silicidation in HfO2 gate insulators on Si by core-level photoemission spectroscopy
S. Toyoda, J. Okabayashi, H. Takahashi, H. Kumigashira, M. Oshima, M. Niwa, K. Usuda, G.L. Liu
J. Appl. Phys. 99, 014901[1-5] (2006).

101. Crystal structures and band offsets of ultrathin HfO2-Y2O3 composite films studied by photoemission and x-ray absorption spectroscopy
M. Komatsu, R. Yasuhara, H. Takahashi, S. Toyoda, H. Kumigashira, M. Oshima, D. Kukuruznyak, and T. Chikyow
Appl. Phys. Lett. 89, 172107[1-3] (2006).

100. Composition dependence of band offsets for (LaAlO3)1-x(Al2O3)x gate dielectrics determined by photoelectron spectroscopy and x-ray absorption spectroscopy;
R. Yasuhara, M. Komatsu, H. Takahashi, S. Toyoda, J. Okabayashi, H. Kumigashira, M. Oshima, D. Kukuruznyak, and T. Chikyow
Appl. Phys. Lett. 89, 122904[1-3] (2006).

99. Annealing-time dependence in interfacial reaction between poly-Si electrode and HfO2/Si gate stack studied by synchrotron radiation photoemission and x-ray absorption spectroscopy
H. Takahashi, J. Okabayashi, S. Toyoda, H. Kumigashira, M. Oshima, K. Ikeda, G. L. Liu, Z. Liu, and K. Usuda
Appl. Phys. Lett., 89, 012102[1-3] (2006), Ibid 89, 169902 (2006).

98. Angle-resolved photoemission spectroscopy of perovskite-type transition-metal oxides and their analyses using tight-binding band structure
H. Wadati, T. Yoshida, A. Chikamatsu, H. Kumigashira, M. Oshima, H. Eisaki, Z.-X. Shen, T. Mizokawa, and A. Fujimori
Phase Transitions 79, 617-635 (2006).

97. In-situ resonant photoemission characterization of La0.6Sr0.4MnO3 layers buried in insulating perovskite oxides
H. Kumigashira, R. Hashimoto, A. Chikamatsu, M. Oshima, T. Ohnishi, M. Lippmaa, H. Wadati and A. Fujimori, K. Ono, M. Kawasaki, and H. Koinuma
J. Appl. Phys. 99, 08S903[1-3] (2006).

96. Ferromagnetism stabilization of ultrathin SrRuO3 films; thickness-dependent physical properties
D. Toyota, I. Ohkubo, H. Kumigashira, M. Oshima, T. Ohnishi, M. Lippmaa, M. Kawasaki, and H. Koinuma
J. Appl. Phys. 99, 08N505[1-3] (2006).

95. Temperature-dependent soft x-ray photoemission and absorption studies of charge disproportionation in La1-xSrxFeO3
H. Wadati, A. Chikamatsu, R. Hashimoto, M. Takizawa, H. Kumigashira, A. Fujimori, M. Oshima, M. Lippmaa, M. Kawasaki, and H. Koinuma
J. Phys. Soc. Jpn. 75, 054704[1-6] (2006).

94. Observation of step-induced magnetic domain formation in La1-xSrxMnO3 thin films by photoelectron emission microscopy
T. Taniuchi, H. Kumigashira, M. Oshima, T. Wakita, T. Yokoya, M. Kubota, K. Ono, H. Akinaga, M. Lippmaa, M. Kawasaki, and H. Koinuma
Appl. Phys. Lett. 89, 112505[1-3] (2006).

93. Robust Ti4+ states in SrTiO3 layers of La0.6Sr0.4MnO3/SrTiO3/La0.6Sr0.4MnO3 junctions
H. Kumigashira, A. Chikamatsu, R. Hashimoto, M. Oshima, T. Ohnishi, M. Lippmaa, H. Wadati, A. Fujimori, K. Ono, M. Kawasaki, and H. Koinuma
Appl. Phys. Lett. 88, 192504[1-3] (2006).
Selected for the May 29, 2006 issue of Virtual Journal of Nanoscale Science & Technology.

92. Photoemission from buried interfaces in SrTiO3/LaTiO3 superlattices
M. Takizawa, H. Wadati, K. Tanaka, M. Hashimoto, T. Yoshida, A. Fujimori, A. Chikamatsu, H. Kumigashira, M. Oshima, K. Shibuya, T. Mihara, T. Ohnishi, M. Lippmaa, M. Kawasaki, H. Koinuma, S. Okamoto, and A. J. Millis
Phys. Rev. Lett. 97, 057601[1-4] (2006).

91. Chemical potential shift and spectral-weight transfer in Pr1-xCaxMnO3 revealed by photoemission spectroscopy
K. Ebata, H. Wadati, M. Takizawa, A. Fujimori, A. Chikamatsu, H. Kumigashira, M. Oshima, Y. Tomioka, and Y. Tokura
Phys. Rev. B 74, 064419[1-6] (2006).

90. Effect of Strong Localization of Doped Holes in Angle-Resolved Photoemission Spectra of La1-xSrxFeO3
H. Wadati, A. Chikamatsu, M. Takizawa, R. Hashimoto, H. Kumigashira, T. Yoshida, T. Mizokawa, A. Fujimori, M. Oshima, M. Lippmaa, M. Kawasaki, and H. Koinuma
Phys. Rev. B 74, 115114[1-5] (2006).

89. The band structure and Fermi surface of La0.6Sr0.4MnO3 thin films studied by in-situ angle-resolved photoemission spectroscopy
A. Chikamatsu, H. Wadati, H. Kumigashira, M. Oshima, A. Fujimori, N. Hamada, T. Ohnishi, M. Lippmaa, K. Ono, M. Kawasaki, and H. Koinuma
Phys. Rev. B 73, 195105[1-7] (2006).

2005年度

88. Chemical analysis of Hf-silicide clusters studied by photoemission spectroscopy
S. Toyoda, J. Okabayashi, H. Kumigashira, M. Oshima, K. Ono, M. Niwa, K. Usuda, and G. L. Liu
J. Electron Spectr. Rel. Phenom. 144-147, 487-490 (2005).

87. Crystallization and chemical structures with annealing in ZrO2 gate insulators studied by photoemission spectroscopy and x-ray absorption spectroscopy
J. Okabayashi, S. Toyoda, H. Kumigashira, M. Oshima, K. Usuda, M. Niwa, and G. L. Liu
J. Vac. Sci. Technol. A 23, 1554-1557 (2005).

86. Crystallization in HfO2 gate insulators with in situ annealing studied by valence-band photoemission and x-ray absorption spectroscopy
S. Toyoda, J. Okabayashi, H. Kumigashira, M. Oshima, K. Yamashita, M. Niwa, K. Usuda, and G. L. Liu
J. Appl. Phys. 97, 104507[1-4] (2005).

85. Precise determination of band offsets and chemical states in SiN/Si studied by photoemission spectroscopy and x-ray absorption spectrosocopy
S. Toyoda, J. Okabayashi, H. Kumigashira, M. Oshima, G.L. Liu, Z. Liu, K. Ikeda, and K. Usuda
Appl. Phys. Lett. 87, 102901[1-3] (2005).

84. Chemical reaction at the interface between polycrystalline Si electrodes and HfO2/Si gate dielectrics by annealing in ultra-high vacuum
H. Takahashi, S. Toyoda, J. Okabayashi, H. Kumigashira, M. Oshima, Y. Sugita, G. L. Liu, Z. Liu, and K. Usuda
Appl. Phys. Lett. 87, 012903[1-3] (2005).

83. Novel metallic ferromatnet Sr2CoO4
J. Matsuno, Y. Okimoto, Z. Fang, X. Z. Yu, Y. Matsui, N. Nagaosa, H. Kumigashira, M. Oshima, M. Kawasaki, and Y. Tokura
Thin solid films 486, 113-116 (2005).

82. In-situ photoemission study of La1-xSrxFeO3 thin films
H. Wadati, D. Kobayashi, A. Chikamatsu, R. Hashimoto, M. Takizawa, K. Horiba, H. Kumigashira, T. Mizokawa, A. Fujimori, M. Oshima, M. Lippmaa, M. Kawasaki, H. Koinuma
J. Electron Spectr. Rel. Phenom. 144-147, 877-880 (2005).

81. Hard x-ray photoemission study of Mn 2p core-levels of La1-xSrxMnO3 thin films
K. Horiba, M. Taguchi, N. Kamakura, K. Yamamoto, A. Chainani, Y. Takata, E. Ikenaga, H. Namatame, M. Taniguchi, A. Awaji, A. Takeuchi, D. Miwa, Y. Nishino, K. Tamasaku, T. Ishikawa, H. Kumigashira, M. Oshima, M. Lippmaa, M. Kawasaki, H. Koinuma, K. Kobayashi, and S. Shin
J. Electron Spectr. Rel. Phenom. 144-147, 557-559 (2005).

80. In-situ angle-resolved photoemission study on La1-xSrxMnO3 thin films grown by laser MBE
A. Chikamatsu, H. Wadati, M. Takizawa, R. Hashimoto, H. Kumigashira, M. Oshima, A. Fujimori, N. Hamada, T. Ohnishi, M. Lippmaa, K. Ono, M. Kawasaki, and H. Koinuma
J. Electron Spectr. Rel. Phenom. 144-147, 511-514 (2005).

79. Spectral evidence for inherent “dead layer” formation at La1-ySryFeO3/La1-xSrxMnO3 heterointerface
R. Hashimoto, A. Chikamatsu, H. Kumigashira, M. Oshima, N. Nakagawa, T. Ohnishi, M. Lippmaa, H. Wadati, A. Fujimori, K. Ono, M. Kawasaki, and H. Koinuma
J. Electron Spectr. Rel. Phenom. 144-147, 479-481 (2005).

78. Sr surface segregation and water cleaning for atomically-controlled SrTiO3 (001) substrates studied by photoemission spectroscopy
D. Kobayashi, R. Hashimoto, A. Chikamatsu, H. Kumigashira, M. Oshima, T. Ohnishi, M. Lippmaa, K. Ono, M. Kawasaki, and H. Koinuma
J. Electron Spectr. Rel. Phenom. 144-147, 443-447 (2005).

77. Thickness-dependent electronic structure of ultrathin SrRuO3 films studied by in situ photoemission spectroscopy
D. Toyota, I. Ohkubo, H. Kumigashira, M. Oshima, T. Ohnishi, M. Lippmaa, M.Takizawa, A. Fujimori, K. Ono, M. Kawasaki, and H. Koinuma
Appl. Phys. Lett. 87, 162508[1-3] (2005).

76. In vacuo photoemission study on atomically-controlled La1-xSrxMnO3 thin films: Composition dependence of the electronic structure
K. Horiba, A. Chikamatsu, H. Kumigashira, M. Oshima, N. Nakagawa, M. Lippmaa, K. Ono, M. Kawasaki, and H. Koinuma
Phys. Rev. B 71, 155420[1-8] (2005).

75. Valence changes associated with the metal-insulator transition in Bi1-xLaxNiO3
H. Wadati, M. Takizawa, T. T. Tran, K. Tanaka, T. Mizokawa, A. Fujimori, A. Chikamatsu, H. Kumigashira, M. Oshima, S. Ishiwata, M. Azuma, and M. Takano
Phys. Rev. B 72, 155103[1-5] (2005).

74. Manifestation of Correlation Effects in the photoemission spectra of Ca1-xSrxRuO3
M. Takizawa, D. Toyota, H. Wadati, A. Chikamatsu, H. Kumigashira, A. Fujimori, M. Oshima, Z. Fang, M. Lippmaa, M. Kawasaki, and H. Koinuma
Phys. Rev. B. 72, 060404(R)[1-4] (2005).

73. Hole-doping-induced changes in the electronic structure of La1-xSrxFeO3; soft x-ray photoemission and absorption study of epitaxial films
H. Wadati, D. Kobayashi, H. Kumigashira, K. Okazaki, T. Mizokawa, A. Fujimori, K. Horiba, M. Oshima, N. Hamada, M. Lippmaa, M. Kawasaki, and H. Koinuma
Phys. Rev. B 72, 035108[1-7] (2005).

2004年度

72. Chemistry and band offsets of HfO2 thin films revealed by photoelectronspectroscopy and x-ray absoroption spectroscopy
S. Toyoda, J. Okabayashi, H. Kumigashira,M. Oshima, K. Ono, M. Niwa, K. Usuda, and N. Hirashita
J. Electron Spectr. Rel. Phenom. 137-140, 141-144 (2004).

71. Chemical states and band offsets of NH3-treated Si oxynitride films studied by high-resolution photoelectron spectroscopy
M. Oshima, S. Toyoda, J. Okabayashi, H. Kumigashira, K. Ono, M. Niwa, K. Usuda, and N. Hirashita
J. Vac. Sci. Technol. A 22, 176-180 (2004).

70. Chemical reaction and metallic cluster formation by annealing-temperature controlling in ZrO2 gate insulator on Si
J. Okabayashi, S. Toyoda, H. Kumigashira, M. Oshima, M. Niwa, K. Usuda, and K. Liu
Appl. Phys. Lett. 85, 5959[1-3] (2004).

69. Effect interlayers and annealing on chemical states of HfO2 gate insulators studied by photoemission spectroscopy
S. Toyoda, J. Okabayashi, H. Kumigashira, M. Oshima, K. Ono, M. Niwa, K. Usuda, and G. L. Liu
Appl. Phys. Lett. 84, 2328-2330 (2004).

68. In-situ photoelectron spectroscopy of LaMnO3 and La0.6Sr0.4MnO3 thin films grown by laser molecular-beam expitaxy
M. Oshima, D. Kobayashi, K. Horiba, H. Ohguchi, H. Kumigashira, K. Ono, N. Nakagawa, M. Lippmaa, M. Kawasaki and H. Koinuma
J. Electron Spectr. Rel. Phenom. 137-140, 145-149 (2004).

67. In-situ photoemission spectroscopic study on La1-xSrxMnO3 thin films grown by combinatorial laser-MBE
H. Kumigashira, K. Horiba, H. Ohguchi, D. Kobayashi, M. Oshima, N. Nakagawa, T. Ohnishi, M. Lippmaa, K. Ono, M. Kawasaki, and H. Koinuma
J. Electron Spectr. Rel. Phenom. 136, 31-36 (2004).

66. Surface electronic structures of terminating-layer-controlled La0.6Sr0.4MnO3 thin films studied by in-situ synchrotron radiation photoemission spectroscopy
H. Kumigashira, K. Horiba, H. Ohguchi, M. Oshima, N. Nakagawa, M. Lippmaa, K. Ono, M. Kawasaki, and H. Koinuma
J. Magn. Magn. Mater. 272-276, 1120-1121 (2004).

65. In-situ synchrotron radiation angle-resolved photoemission study on La0.6Sr0.4MnO3 thin films grown by laser molecular beam epitaxy
H. Kumigashira, K. Horiba, H. Ohguchi, M. Oshima, N. Nakagawa, M. Lippmaa, K. Ono, M. Kawasaki, and H. Koinuma
J. Magn. Magn. Mater. 272-276, 434-435 (2004).

64. In-situ Mn 2p-3d resonant photoemission study on La0.6Sr0.4MnO3 epitaxial thin films grown by laser MBE
K. Horiba, H. Ohguchi, D. Kobayashi, H. Kumigashira, M. Oshima, N. Nakagawa, M. Lippmaa, K. Ono, M. Kawasaki, and H. Koinuma
J. Magn. Magn. Mater. 272-276, 436-437 (2004).

63. Ultrahigh-resolution angle-resolved photoemission study of LaX (X = S, Se, Te)
M. Nakayama, T. Ito, H. Kumigashira, H. Matsui, H. Komatsu, T. Takahashi, H. Aoki, and A. Ochiai
J. Magn. Magn. Mater. 272-276 (2004) 121-122.

62. Ultrahigh-resolution angle-resolved photoemission spectroscopy of La- and Ce-monochalcogenides
M. Nakayama, H. Aoki, A. Ochiai, T. Ito, H. Kumigashira, T. Takahashi, and H. Harima
Phys. Rev. B 69, 155116[1-8] (2004).

61. Photoemission and X-ray absorption study of two-dimensional triangular lattice superconductor: Na0.35CoO2: 1.3H2O
M. Kubota, K. Takada, T. Sasaki, H. Kumigashira, J. Okabayashi, M. Oshima, and K. Ono
Phys. Rev. B 70, 012508[1-4] (2004).

60. Nature of Well-Screened State in Hard X-ray Mn 2p Core-Level Photoemission of La1-xSrxMnO3 Films
K. Horiba, M. Taguchi, A. Chainani, Y. Takata, E. Ikenaga, H. Namatame, M. Taniguchi, A. Awaji, A. Takeuchi, D. Miwa, Y. Nishino, K. Tamasaku, T. Ishikawa, H. Kumigashira, M. Oshima, M. Lippmaa, M. Kawasaki, H. Koinuma, K. Kobayashi, and S. Shin
Phys. Rev. Lett. 93, 236401[1-4] (2004).

59. High-resolution synchrotron radiation photoemission characterization for atomically-controlled SrTiO3(001) substrate surfaces subjected to various surface treatments
D. Kobayashi, H. Kumigashira, M. Oshima, T. Ohnishi, M. Lippmaa, K. Ono, M. Kawasaki, and H. Koinuma
J. Appl. Phys. 96, 7183-7188 (2004).

58. Inherent charge transfer layer formation at La0.6Sr0.4FeO3/La0.6Sr0.4MnO3 heterointerface
H. Kumigashira, D. Kobayashi, R. Hashimoto, A. Chikamatsu, M. Oshima, N. Nakagawa, T. Ohnishi, M. Lippmaa, H. Wadati, A. Fujimori, K. Ono, M. Kawasaki, and H. Koinuma
Appl. Phys. Lett. 84, 5353-5355 (2004).

57. Preparation of thermally stable TiO2-terminated SrTiO3 (100) substrate surface
T. Ohnishi, K. Shibuya, M. Lippmaa, D. Kobayashi, H. Kumigashira, M. Oshima, and H. Koinuma
Appl. Phys. Lett. 85, 272-274 (2004).

2003年度

56. Interfacial chemistry and structures of ultrathin Si oxynitride films
M. Oshima, K. Kimura, K. Ono, K. Horiba, K. Nakamura, H. Kumigashira, J.-H. Oh, M. Niwa, K. Usuda, and N. Hirashita
Appl. Surf. Sci. 216, 291-295 (2003).

55. Effect of nitrogen doping into SiO2 studied by photoemission spectroscopy
S. Toyoda, J. Okabayashi, H. Kumigashira, M. Oshima, K. Ono, M. Niwa, K. Usuda, and N. Hirashita
Appl. Phys. Lett. 83, 5449-5451 (2003).

54. Chemistry and band offsets of HfO2 thin films for gate insulators
M. Oshima, S. Toyoda, T. Okumura, J. Okabayashi, H. Kumigashira, K. Ono, M. Niwa, K. Usuda, and N. Hirashita
Appl. Phys. Lett. 83, 2172-2174 (2003).

53. In-situ photoemission characterization of terminating-layer-controlled La0.6Sr0.4MnO3 thin films
H. Kumigashira, K. Horiba, H. Ohguchi, K. Ono, M. Oshima, N. Nakagawa, M. Lippmaa, M. Kawasaki, and H. Koinuma
Appl. Phys. Lett. 82, 3430-3432 (2003).

52. A high-resolution synchrotron-radiation angle-resolved photoemission system combined with a laser molecular beam epitaxy
K. Horiba, H. Ohguchi, H. Kumigashira, M. Oshima, K. Ono, N. Nakagawa, M. Lippmaa, M. Kawasaki and H. Koinuma
Rev. Sci. Instrum. 74, 3406-3412 (2003).